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Improvement of overlay in the oxide- and W-chemical-mechanical polish processes

机译：改善氧化物和W化学机械抛光工艺中的覆盖层

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Abstract: The issue regarding wafer alignment is arisen due to flattening of the alignment mark topography by oxide- and W- CMP process. This results in degradation in alignment signal intensity which is a crucial factor affecting overlay accuracy. Computer simulation of alignment signal intensity for the oxide- and W-CMP processes has been successfully performed. Result indicates alignment signal intensity swings with depth of the phase grating alignment mark. A critical range of depth has to be maintained for achieving alignment signal intensity high enough for overlay accuracy. The W-CMP process is thus utilized for obtaining depth of alignment mark within this range. Experiment has successfully demonstrated improvement in overlay. !3

机译：摘要：关于晶圆对准的问题是由于通过氧化物和W-CMP工艺使对准标记的形貌平坦化而引起的。这导致对准信号强度下降，这是影响覆盖精度的关键因素。已经成功进行了氧化物和W-CMP工艺的对准信号强度的计算机模拟。结果表明对准信号强度随相位光栅对准标记的深度而摆动。必须保持临界深度范围，以实现足够高的对准信号强度以达到重叠精度。因此，W-CMP工艺用于获得在该范围内的对准标记的深度。实验成功地证明了覆盖层的改进。！3

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来源
《Optical Microlithography XI》|1998年|p.978-985|共8页
会议地点 Santa Clara CA(US)
作者
Sen-Shan Yang; World-Wide Semiconductor Manufacturing Corp.; Hsinchu; Taiwan.;
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正文语种 eng
中图分类轻工业、手工业;
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机译：在抛光混凝土覆盖层上获得一致的结果
2. High-sensitivity temperature sensor using thermo-optic polymer waveguide overlays on side-polished single mode fiber [J] . Sang-Woo Kim, Woong-Gyu Jung, Jong-Kuk Yoon, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2001,第164期

机译：在侧面抛光的单模光纤上使用热光聚合物波导覆盖层的高灵敏度温度传感器
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机译：在侧面抛光的单模光纤上使用热光聚合物波导覆盖层的高灵敏度温度传感器
4. Improvement of overlay in the oxide- and W-chemical-mechanical polish processes [C] . Sen-Shan Yang Conference on optical microlithography . 1998

机译：氧化物和W-化学机械抛光工艺中的覆盖层的改进
5. Predicting overlay errors on device wafers due to the interaction of optical and EUV lithography fabrication processes [D] . Zheng, Liang 2006

机译：预测由于光学和EUV光刻制造工艺的相互作用而导致的器件晶圆上的覆盖错误
6. Tris(thiocyanato-κN)tris(triphenylphosphine oxide-κO)europium(III)–(nitrato-κ2OO′)bis(thiocyanato-κN)tris(triphenylphosphine oxide-κO)europium(III) (1/1) [O] . Anthony T. Thames, Frankie D. White, Lam N. Pham, 2012

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7. pH sensor using Langmuir-Blodgett overlays on polished optical fibers [O] . Flannery D., James Stephen W., Tatam Ralph P., 1997

机译：pH传感器，在抛光的光纤上使用Langmuir-Blodgett覆盖层
8. Determination of the Microscopic Structure of Surface and Overlayers, Adsorbate-Adsorbate Interaction Energies, and Rates of Surface Processes. [R] . Weinberg, W. H. 1982

机译：确定表面和覆盖层的微观结构，吸附物 - 吸附物相互作用能和表面过程的速率。

Improvement of overlay in the oxide- and W-chemical-mechanical polish processes

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