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首页> 外文会议>Optical Microlithography XIX pt.1 >Optical properties and process impacts of high transmission EAPSM
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Optical properties and process impacts of high transmission EAPSM

机译：高透射EAPSM的光学特性和工艺影响

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摘要

We explore technical and practical issues to apply EAPSM technology with high transmission into ArF lithography. This technique needs to be reviewed in the standpoint of process and device fabrication using short wavelength, high NA, OAI and OPC technology. In this paper, we analyze optical characteristics of multi-stacked film that composed of phase material like MoSi, Cr-SiON, Cr-SiO_2, and Ta-SiO_2. Three-dimensional analyses of film structure are to consider intensity variations and optical influence by n &k value, thickness and polarization light. The comparison will be focused on optimization or determination of each high T materials. Moreover, we specify CD impacts of mask CD error, variations of phase and transmission for various pattern size, and 3D structure. Polarization effect in this structure and high NA condition will be also interesting part to be studied impacts on process. In the device application of technology, we consider overall process margin to satisfy cell & periphery design rule and OPC treatment to improve process windows. Optimum SRAF design and tri-tone mask technology will be key issue to improve DOF margin of specific design rule in OPC treatment. For 65nm technology or less, intensity formation distributed on mask affects CD and process margin directly on wafer patterning process. High transmission EAPSM will have specifically differences with 6% EAPSM in OPC treatment and it will be required new OPC rule in ArF lithography. Using simulation and experiment, we find high transmission EAPSM has advantages in device manufacturing and approach technical issue to be solved in material, process and device application. This technique shows to improve exposure latitude & DOF margin, and to reduce MEEF in process. Finally it will be good candidate to satisfy lithography requirement of 65nm and 45nm node.
机译：我们探索将EAPSM技术以高透射率应用于ArF光刻的技术和实践问题。从使用短波长，高NA，OAI和OPC技术的工艺和器件制造的角度出发，需要对该技术进行审查。在本文中，我们分析了由相材料（如MoSi，Cr-SiON，Cr-SiO_2和Ta-SiO_2）组成的多层膜的光学特性。薄膜结构的三维分析应考虑n＆k值，厚度和偏振光的强度变化和光学影响。比较将集中于优化或确定每种高T材料。此外，我们指定了掩模CD错误的CD影响，各种图案尺寸的相位和透射率变化以及3D结构。在这种结构和高NA条件下的极化效应也将是有趣的部分，以研究其对工艺的影响。在技​​术的设备应用中，我们考虑整体工艺裕度以满足单元和外围设计规则，并考虑OPC处理以改善工艺窗口。最佳的SRAF设计和三音掩膜技术将是提高OPC处理中特定设计规则的自由度裕度的关键问题。对于等于或小于65nm的技术，分布在掩模上的强度形成会直接影响晶圆构图工艺中的CD和工艺裕量。高透射率EAPSM在OPC处理中将与6％EAPSM有特别的区别，并且在ArF光刻中将需要新的OPC规则。通过仿真和实验，我们发现高传输EAPSM在设备制造方面具有优势，并解决了材料，工艺和设备应用中需要解决的技术问题。该技术表明可以提高曝光范围和自由度，并减少过程中的MEEF。最后，满足65nm和45nm节点的光刻要求将是一个很好的选择。

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