• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Optical microlithography XXVI >SMO and NTD for Robust Single Exposure Solution on Contact Patterning for 40nm Node Flash Memory Devices
【24h】

SMO and NTD for Robust Single Exposure Solution on Contact Patterning for 40nm Node Flash Memory Devices

机译：SMO和NTD提供了针对40nm节点闪存器件的接触图案的鲁棒单次曝光解决方案

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Contact-hole patterning is even more challenging than line/space patterning because of the lower image contrast and smaller process window. To enable single exposure solution of 40-45nm half pitch contact-hole at this nearly resolvable limit of current 1.35NA ArF immersion lithography, negative tone development (NTD) process, source mask co-optimization (SMO) methodology and free-form source were explored in this study. The optimization of free form source and mask for NTD process was firstly carried out via Brion Tachyon SMO™ software. The wafer-level performance was then compared for different mask layout solutions and different mask types. A manufacture worthy process window was achieved for 40nm technology node Flash memory product through the combination of free-from source, SMO and NTD technologies. In the performance comparison for mask types, 6% HTPSM performed wider DoF and exposure latitude for all three pitch designs. But OMOG mask is superior to 6% HTPSM on mask and wafer CD uniformity. To further improve the overlapping process window, preserving the SMO layout solution as possible for the sparse environments and minimizing the SRAF writing errors were proposed as the two most critical tuning knobs.
机译：由于较低的图像对比度和较小的处理窗口，接触孔图案比线/空间图案更具挑战性。为了在目前几乎可解决的1.35NA ArF浸没光刻技术极限下实现40-45nm半节距接触孔的单曝光解决方案，分别采用了负色调显影（NTD）工艺，源掩模共优化（SMO）方法和自由形式的光源在这项研究中进行了探索。首先通过Brion Tachyon SMO™软件对NTD工艺的自由形式源和掩模进行了优化。然后比较了不同掩膜版图解决方案和不同掩膜类型的晶圆级性能。通过结合免源，SMO和NTD技术，为40nm技术节点闪存产品实现了值得制造的工艺窗口。在掩模类型的性能比较中，对于所有三种间距设计，6％HTPSM表现出更宽的自由度和曝光范围。但是OMOG掩模在掩模和晶圆CD均匀性方面优于6％HTPSM。为了进一步改善重叠的过程窗口，建议将SMO布局解决方案尽可能地保留在稀疏环境中，并使SRAF写入错误最小化，这是两个最关键的调整旋钮。

著录项

  • 来源
    《Optical microlithography XXVI》|2013年|868322.1-868322.9|共9页
  • 会议地点 San Jose CA(US)
  • 作者

    Chih-Chieh Yu; C. C. Yang; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu;

  • 作者单位

    Macronix International Co., Ltd., Technology Development Center, No. 16, Li-Hsin Rd., Science Park, Hsinchu 300, Taiwan;

    Macronix International Co., Ltd., Technology Development Center, No. 16, Li-Hsin Rd., Science Park, Hsinchu 300, Taiwan;

    Macronix International Co., Ltd., Technology Development Center, No. 16, Li-Hsin Rd., Science Park, Hsinchu 300, Taiwan;

    Macronix International Co., Ltd., Technology Development Center, No. 16, Li-Hsin Rd., Science Park, Hsinchu 300, Taiwan;

    Macronix International Co., Ltd., Technology Development Center, No. 16, Li-Hsin Rd., Science Park, Hsinchu 300, Taiwan;

    Macronix International Co., Ltd., Technology Development Center, No. 16, Li-Hsin Rd., Science Park, Hsinchu 300, Taiwan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Single exposure; NTD; SMO; OMOG; free form source; process window; CDU; MEEF;

    机译：一次曝光； NTD; SMO； OMOG；自由形式源；处理窗口； CDU； MEEF;

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号