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Best Focus Shift Mitigation for Extending the Depth of Focus

机译：最佳焦点偏移减轻功能，可扩展焦点深度

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摘要

The low-k_1 domain of immersion lithography tends to result in much smaller depths of focus (DoF) compared to prior technology nodes. For 28 nm technology and beyond it is a challenge since (metal) layers have to deal with a wide range of structures. Beside the high variety of features, the reticle induced (mask 3D) effects became non-negligible. These mask 3D effects lead to best focus shift. In order to enhance the overlapping DoF, so called usable DoF (uDoF), alignment of each individual features best focus is required. So means the mitigation of the best focus shift. This study investigates the impact of mask 3D effects and the ability to correct the wavefront in order to extend the uDoF. The generation of the wavefront correction map is possible by using computational lithographic such Tachyon simulations software (from Brion). And inside the scanner the wavefront optimization is feasible by applying a projection lens modulator, Flex Wave™ (by ASML). This study explores both the computational lithography and scanner wavefront correction capabilities. In the first part of this work, simulations are conducted based on the determination and mitigation of best focus shift (coming from mask 3D effects) so as to improve the uDoF. In order to validate the feasibility of best focus shift decrease by wavefront tuning and mitigation results, the wavefront optimization provided correction maps are introduced into a rigorous simulator. Finally these results on best focus shift and uDoF are compared to wafers exposed using Flex Wave then measured by scanning electron microscopy (SEM).
机译：与现有技术节点相比，浸没式光刻的低k_1域趋向于导致更小的聚焦深度（DoF）。对于（28nm）及其以后的技术来说，这是一个挑战，因为（金属）层必须处理各种各样的结构。除了多种多样的功能外，光罩引起的（掩模3D）效果变得不可忽略。这些蒙版3D效果可导致最佳焦点移动。为了增强重叠的DoF，即所谓的可用DoF（uDoF），需要对齐每个单独的功能以获得最佳焦点。因此意味着减轻最佳焦点转移。这项研究调查了遮罩3D效果的影响以及校正波前以扩展uDoF的能力。波前校正图的生成可以通过使用诸如Tachyon模拟软件（来自Brion）的计算光刻技术来实现。在扫描仪内部，通过应用投影透镜调制器Flex Wave™（由ASML制造），可以实现波前优化。这项研究探讨了计算光刻和扫描仪波前校正功能。在这项工作的第一部分中，基于确定和减轻最佳焦点偏移（来自蒙版3D效果）进行了仿真，以改善uDoF。为了通过波前调整和缓解结果验证最佳焦点偏移降低的可行性，将波前优化（提供的校正图）引入了严格的模拟器中。最后，将有关最佳聚焦偏移和uDoF的这些结果与使用Flex Wave曝光的晶圆进行比较，然后通过扫描电子显微镜（SEM）进行测量。

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  • 来源
    《Optical microlithography XXVI》|2013年|868313.1-868313.10|共10页
  • 会议地点 San Jose CA(US)
  • 作者

    A.Szucs; J.Planchot; V.Farys; E.Yesilada; C.Alleaume; L.Depre; R.Dover; C.Gourgon; M.Besacier; A. Nachtwein; P. Rusu;

  • 作者单位

    STMicroelectronics, 850 rue Jean Monnet, F 38926 Crolles Cedex, France;

    STMicroelectronics, 850 rue Jean Monnet, F 38926 Crolles Cedex, France;

    STMicroelectronics, 850 rue Jean Monnet, F 38926 Crolles Cedex, France;

    STMicroelectronics, 850 rue Jean Monnet, F 38926 Crolles Cedex, France;

    STMicroelectronics, 850 rue Jean Monnet, F 38926 Crolles Cedex, France;

    ASML Brion, 4211 Burton Dr. Santa Clara, CA 95054, USA;

    ASML Brion, 4211 Burton Dr. Santa Clara, CA 95054, USA;

    LTM, CNRS CEA, 1 avenue des Martyrs, F 38054 Grenoble, France;

    LTM, CNRS CEA, 1 avenue des Martyrs, F 38054 Grenoble, France;

    ASML Netherlands B.V., De Run 6501, 5504DR Veldhoven The Netherlands;

    ASML Netherlands B.V., De Run 6501, 5504DR Veldhoven The Netherlands;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Best Focus Shift; Depth of Focus; Tachyon SMO-FW; Flex WaveTM; Scanning Electron Microscopy (SEM);

    机译：最佳焦点转移；焦点深度； Tachyon SMO-FW； Flex WaveTM;扫描电子显微镜（SEM）;

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