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The Effect of Mask and Source Complexity on Source Mask Optimization

机译：掩码和源复杂度对源掩码优化的影响

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摘要

More complex source and mask shapes are required to maximize the process window in low k_1 era. In simulation, the improvement can be shown well with ideal source and mask shapes. However imperfection of the source and mask can cause critical dimension (CD) errors and results in smaller process margin than expected one. In this paper, it is shown that how process margins can be improved with different source and mask complexities. Also the effect of source and mask complexities on CD errors and process margin degradation is discussed. The error source of the electron beam mask pattern generator is investigated and used for mask CD uniformity estimation with different mask complexity.
机译：在低k_1时代，需要更复杂的源和掩模形状以最大化处理窗口。在仿真中，采用理想的光源和掩模形状可以很好地显示出这种改进。然而，源和掩模的不完善会导致临界尺寸（CD）错误，并导致工艺裕度比预期的要小。在本文中，表明了如何通过不同的源和掩模复杂度来提高工艺裕量。还讨论了源极和掩模复杂度对CD错误和工艺裕量降低的影响。研究了电子束掩模图案发生器的误差源，并将其用于不同掩模复杂度的掩模CD均匀性估计。

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  • 来源
    《Optical microlithography XXVI》|2013年|86830C.1-86830C.9|共9页
  • 会议地点 San Jose CA(US)
  • 作者

    Seung-Hune Yang; Ningning Jia; SeongBo Shim; Dmitry Vengertsev; Youngchang Kim; Jungdal Choi; Ho-Kyu Kang;

  • 作者单位

    Samsung Electronics, San-16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701 Korea;

    Samsung Electronics, San-16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701 Korea;

    Samsung Electronics, San-16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701 Korea;

    Samsung Electronics, San-16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701 Korea;

    Samsung Electronics, San-16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701 Korea;

    Samsung Electronics, San-16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701 Korea;

    Samsung Electronics, San-16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701 Korea;

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  • 正文语种 eng
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