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Benchmarking study of 3D mask modeling for 2X and 1X nodes

机译：2X和1X节点的3D蒙版建模的基准研究

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摘要

With ever shrinking critical dimensions, half nm OPC errors are a primary focus for process improvement in computational lithography. Among many error sources for 2x and 1x nodes, 3D mask modeling has caught the attention of engineers and scientists as a method to reduce errors at these nodes. While the benefits of 3D mask modeling are well known, there will be a runtime penalty of 30-40% that needs to be weighed against the benefit of optical model accuracy improvements. The economically beneficial node to adopt 3D mask modeling has to be determined by balancing these factors. In this paper, a benchmarking study has been conducted on a 20nm cut mask, metal and via layers with two different computational lithography approaches as compared with standard thin-mask approximation modeling. Besides basic RMS error metrics for model calibration and verification, through pitch and through size optical proximity behavior, through focus model predictability, best focus prediction and common DOF prediction are thoroughly evaluated. Runtime impact and OPC accuracy are also studied.
机译：随着临界尺寸的不断缩小，半纳米OPC误差已成为改进计算光刻工艺的主要重点。在2x和1x节点的许多错误源中，作为减少这些节点错误的一种方法，3D蒙板建模引起了工程师和科学家的注意。虽然3D蒙版建模的好处众所周知，但将需要权衡30-40％的运行时间损失和光学模型准确性改善的好处。必须通过平衡这些因素来确定采用3D蒙版建模的经济上有利的节点。与标准的薄掩模近似建模相比，本文采用两种不同的计算光刻方法对20nm切割掩模，金属和通孔层进行了基准研究。除了用于模型校准和验证的基本RMS误差度量外，还可以通过俯仰和尺寸光学接近性行为，通过焦点模型的可预测性，最佳焦点预测和常见DOF预测来进行全面评估。还研究了运行时影响和OPC准确性。

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  • 来源
    《Optical microlithography XXVI》|2013年|86831A.1-86831A.11|共11页
  • 会议地点 San Jose CA(US)
  • 作者

    ChangAn Wang; Chao-Chun Liang; Huikan Liu; Chidam Kallingal; Derren Dunn; James Oberschmidt; Jaione Tirapu Azpiroz;

  • 作者单位

    GLOBALFOUNDRIES, 2070 Route 52, Hopewell Junction, NY 12533, USA;

    GLOBALFOUNDRIES, 2070 Route 52, Hopewell Junction, NY 12533, USA;

    GLOBALFOUNDRIES, 2070 Route 52, Hopewell Junction, NY 12533, USA;

    GLOBALFOUNDRIES, 2070 Route 52, Hopewell Junction, NY 12533, USA;

    IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, USA;

    IBM Semiconductor Research and Development Center (SRDC), 2070 Route 52, Hopewell Junction, NY 12533, USA;

    IBM Research, Av. Pasteur 146 138, Rio de Janeiro, RJ, 22290-240 Brazil;

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  • 正文语种 eng
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