Local topography of optoelectronic substrates prepared by dry plasma etching process

机译：通过干法等离子体刻蚀工艺制备的光电基板的局部形貌

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In this work, the etch rate of silicon carbide and aluminum oxide were studied as a function of the angle etching material and flow of plasma. Al_2O_3 and SiC are important materials in the design of optical and electronic devices and the topography of the wafers has a large influence on the device quality. Argon was applied for the dry etching of Al_2O_3 and SiC wafers. The wafer slope for highest obtained etch is defined. Atomic force microscopy was used to good morphology control of etched wafers. Statistical and correlation analysis was applied to estimate the surface perfection. Interferometry allowed to control etching rate.

机译：在这项工作中，研究了碳化硅和氧化铝的腐蚀速率与角度腐蚀材料和等离子流的关系。 Al_2O_3和SiC是光学和电子设备设计中的重要材料，晶片的形貌对设备质量有很大的影响。氩气用于干法蚀刻Al_2O_3和SiC晶片。定义了用于获得最高蚀刻的晶片斜率。原子力显微镜用于蚀刻晶片的良好形态控制。应用统计和相关分析来估计表面完美度。干涉测量法可以控制蚀刻速率。

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来源
《Optics and measurement confercnec 2014》|2014年|944208.1-944208.6|共6页
会议地点 Liberec(CZ)
作者
Dinara Dallaeva; Shikhgasan Ramazanov; Elena Prokopyeva; Pavel Tomanek; Lubomir Grmela;
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作者单位

Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technicka 8, 616 00 Brno, Czech Republic;

Dagestan State University, Faculty of Physics, Gadjieva 43a, 367000, Makhachkala, Russia;

Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technicka 8, 616 00 Brno, Czech Republic;

Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technicka 8, 616 00 Brno, Czech Republic;

Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technicka 8, 616 00 Brno, Czech Republic;

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原文格式 PDF
正文语种 eng
中图分类
关键词
etching; sapphire; silicon carbide; substrate; atomic force microscopy;

机译：蚀刻蓝宝石;碳化硅基质;原子力显微镜;

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专利

1. Dry etching process for fabrication of optoelectronic gratings in III-V substrates [J] . Gozdz A.S., Shelburne J.A. III Electronics Letters . 1991,第24期

机译：在III-V基板中制造光电子光栅的干法蚀刻工艺
2. Dry Etching Characteristics of ZnO Thin Films for the Optoelectronic Device by Using Inductively Coupled Plasma [J] . Joo Young-Hee, Woo Jong-Chang, Kim Chang-Il Transactions on Electrical and Electronic Materials . 2012,第1期

机译：电感耦合等离子体光电子器件用ZnO薄膜的干刻蚀特性
3. Molecular dynamics simulation on selective etching of α-quartz and amorphous quartz substrate using low-energy argon ion bombardment model in dry etching process [J] . Abdul Haadi Abdul Manap, Khairudin Mohamed Journal of microanolithography, MEMS, and MOEMS . 2015,第3期

机译：低能氩离子轰击模型在干法刻蚀中选择性刻蚀α-石英和非晶态石英衬底的分子动力学模拟
4. Local topography of optoelectronic substrates prepared by dry plasma etching process [C] . Dinara Dallaeva, Shikhgasan Ramazanov, Elena Prokopyeva, Optics and measurement confercnec . 2015

机译：通过干等离子体蚀刻工艺制备光电子基材的本地地形
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

机译：在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响（使用三氟化甲基），并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
6. Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching [O] . Lung-Chien Chen, Wen-Fang Tsai 2013

机译：通过无掩模化学刻蚀制备的涂有银纳米颗粒的蓝宝石图案衬底上的GaN基发光二极管的性能
7. Dry Etching Characteristics of ZnO Thin Films for the Optoelectronic Device by Using Inductively Coupled Plasma [O] . Chang-Il Kim, Young-Hee Joo, Jong-Chang Woo 2012

机译：电感耦合等离子体光电子器件用ZnO薄膜的干刻蚀特性
8. Etching Characteristics and Surface Analysis of Molecular Bean Epitaxy Grown P-Type Aluminum Gallium Nitride With Boron Trichloride/Chlorine Gases in Inductively Coupled Plasma (ICP) Dry Etching [R] . Semendy, F. , Boyd, P. , Lee, U. 2004

机译：电感耦合等离子体（ICp）干蚀刻中三氯化硼/氯气体分子外延生长p型氮化铝镓的刻蚀特性及表面分析

Local topography of optoelectronic substrates prepared by dry plasma etching process

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