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首页> 外文会议>PCIM Asia 2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management >A Comparison of Switching Characteristics between SiC BJT and Si IGBT at Junction Temperature above 200℃
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A Comparison of Switching Characteristics between SiC BJT and Si IGBT at Junction Temperature above 200℃

机译：200℃以上结温下SiC BJT和Si IGBT的开关特性比较

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摘要

Switching characteristics of a Silicon Carbide Bipolar Junction Transistor (SiC BJT) under varying junction temperatures up to 240℃ under high power rating (600V/18A) are presented. A short circuit current path is created to heat up the device under test (DUT). The switching power loss is measured under different junction temperatures. The total on/off loss is found to be almost constant across the whole junction temperature range. For comparison purposes, the switching test for Si IGBT is implemented with a maximum junction temperature of 165℃. The experimental results clearly demonstrate the advantages of SiC BJTs for high frequency and high temperature power applications.
机译：给出了碳化硅双极结型晶体管（SiC BJT）在高额定功率（600V / 18A）和高达240℃的变化结温下的开关特性。会创建一条短路电流路径来加热被测设备（DUT）。开关功率损耗是在不同结温下测得的。发现总的开/关损耗在整个结温范围内几乎恒定。为了比较，在最高结温为165℃的情况下执行了Si IGBT的开关测试。实验结果清楚地证明了SiC BJT在高频和高温功率应用中的优势。

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