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首页> 外文会议>Photomask and Next-Generation Lithography Mask Technology XIII pt.2 >Simulation of Dry Etch Profile Dynamics and CD Variation Due to Microloading
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Simulation of Dry Etch Profile Dynamics and CD Variation Due to Microloading

机译：由于微负载而引起的干蚀刻轮廓动力学和CD变化的模拟

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摘要

Establishing parameters and tuning a dry etch process is an important task in maskmaking. Simulation should complement the time-consuming experiments to reduce cost and shorten development time. TRAVIT is a dry etch simulation tool that has been developed to simulate etch profiles, linewidths, and microloading dependent variation of critical dimensions (CD) resulting from dry etch. The software accepts GDS patterns, materials, initial resist profile, and process parameters. A mathematical model was further developed for more accurate predictions of etch profile while keeping simulation speed high to account for CD variation. Special attention was given to the footing effect. It contributes to significant CD variation if the etch time after end-point detection is not long enough. On the other hand, overetch leads to increased etch bias, which is not desirable. The simulation helps to optimize the post-etch time and minimize CD variation and bias.
机译：建立参数和调整干法蚀刻工艺是掩模制造中的重要任务。仿真应补充费时的实验，以降低成本并缩短开发时间。 TRAVIT是一种干法蚀刻仿真工具，已开发用于模拟蚀刻轮廓，线宽和干法蚀刻导致的临界尺寸（CD）的微加载相关变化。该软件接受GDS图案，材料，初始抗蚀剂轮廓和工艺参数。进一步开发了数学模型，以更准确地预测蚀刻轮廓，同时保持较高的仿真速度以解决CD变化。特别注意了立足效果。如果端点检测后的蚀刻时间不够长，则会导致CD明显变化。另一方面，过蚀刻导致蚀刻偏压增加，这是不希望的。仿真有助于优化刻蚀后的时间，并最大程度地减小CD变化和偏差。

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