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首页> 外文会议>Photomask and Next-Generation Lithography Mask Technology XIV pt.2; Proceedings of SPIE-The International Society for Optical Engineering; vol.6607 pt.2 >Fundamental limit of ebeam lithography
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Fundamental limit of ebeam lithography

机译：电子束光刻的基本极限

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Particle beams with collimated discrete charged carriers such as electrons have been employed to lithographically transfer design patterns onto the photoresist for fabrication of devices, such as photomasks. In this paper, we use a single standard deviation o of total blur based on Gaussian convolution kernel to address the limit of ebeam lithography, where the total blur is constituted of several mechanisms, including space charge effect within the ebeam, shot noise, resist diffusion, and photoacid fluctuation, etc. Based on the Gaussian blur imaging formalism including both electron forward scattering and backward scattering, we derive a fundamental principle based analysis to address the patterning resolution limit, local pattern density (LPD) dependent critical dimension (CD) proximity bias, CD non-linearity, image edge-slope, 2D corner pull back and 2D touch corner structures. Assuming a minimum normalized image log slope of NILS > = 1 across all LPD is required for high volume manufacturability, the requirement of maximum total blur can be derived as σ ≤ CD/2.4 for a given exposed feature size targeted to pattern. The objective of this paper is to establish a predictive model with simplicity for fundamental limit of ebeam lithography, and accordingly to define the requirement of blur reduction for meeting technology roadmap spec. The key emphasis of this paper is to highlight that mask patterning capability is becoming resolution limited with equipment and material available today. This is an inflection point! An integrated plan for total blur reduction is urgently needed for ebeam lithography to continue enabling technologies moving beyond 45nm and 32nm nodes.
机译：具有准直的离散带电载流子（例如电子）的粒子束已用于将设计图案光刻转移到光刻胶上，以制造器件（例如光掩模）。在本文中，我们使用基于高斯卷积核的总模糊的单个标准偏差o来解决电子束光刻的局限性，其中总模糊由几种机制构成，包括电子束内的空间电荷效应，散粒噪声，抗蚀剂扩散以及光酸起伏等。基于包括电子正向散射和反向散射的高斯模糊成像形式，我们得出基于基本原理的分析以解决图案分辨率的限制，局部图案密度（LPD）依赖的临界尺寸（CD）的问题。偏置，CD非线性，图像边缘倾斜，2D角回拉和2D触摸角结构。假设要实现大批量可制造性，所有LPD的NILS最小标准化图像对数斜率> = 1，那么对于给定图案目标的给定曝光特征尺寸，最大总模糊度的要求可以推导为σ≤CD / 2.4。本文的目的是建立一种简单的预测模型，以简化电子束光刻的基本极限，并据此定义减少模糊的要求，以满足技术路线图的要求。本文的重点是强调掩模的图案形成能力正受到当今可用设备和材料的限制。这是一个转折点！电子束光刻迫切需要一个用于减少总模糊的集成计划，以继续使技术超越45nm和32nm节点。

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