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首页> 外文会议>Photomask and Next-Generation Lithography Mask Technology XIV pt.2; Proceedings of SPIE-The International Society for Optical Engineering; vol.6607 pt.2 >The optimization of CD uniformity and measurement on mask and wafer
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The optimization of CD uniformity and measurement on mask and wafer

机译：CD均匀性的优化以及在掩模和晶圆上的测量

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摘要

As pattern size is shrinking, required mask CD specification is tighter and it's effect on wafer patterning is more severe. To enhance the device performance, wafer CD uniformity should be enhanced and controlled by mask global CD uniformity. Mask global CD uniformity usually can be enhanced by mask process and optimal fogging effect correction. To enhance the mask global CD uniformity on mask, resist process and FEC (Fogging Effect Correction), reliable CD measurement tool and methods are necessary. Recently, group CD using OCD(Spectroscopic Ellipsometer) or AIMS(Aerial Image Measurement and Simulation) is used to represent global CD variation on mask. These methods are removing local CD variation on mask. Because local CD variation on wafer is large compared with the effect of local CD variation of mask, global CD uniformity can be measured with suppressed local CD variation [1]. In this paper, local CD variation of mask and wafer is evaluated, and area CD and smoothing methods are used to measure CD on mask and wafer, and the correlation of global CD of mask and field CD of wafer are evaluated. By these methods, CD measurement repeatability can be enhanced to get closer correlation of mask and wafer. Close correlation makes fine CD correction on mask to get better field CD uniformity on wafer. And the repeatability of field to field CD uniformity of wafer is evaluated according to measurement tool of CD-SEM and scatterometry.
机译：随着图案尺寸的缩小，所需的掩模CD规范越来越严格，并且对晶圆图案的影响也越来越严重。为了提高器件性能，应通过掩模全局CD均匀性来增强和控制晶圆CD均匀性。通常，可以通过掩模工艺和最佳雾化效果校正来增强掩模的总体CD均匀性。为了提高掩模，掩模工艺和FEC（雾化效果校正）上的掩模整体CD均匀性，需要可靠的CD测量工具和方法。最近，使用OCD（光谱椭圆仪）或AIMS（航空图像测量和模拟）的CD组被用来表示掩模上CD的整体变化。这些方法消除了掩模上的局部CD变化。由于与掩模上的局部CD变化相比，晶片上的局部CD变化较大，因此可以在抑制局部CD变化的情况下测量整体CD均匀性[1]。本文评估了掩模和晶圆的局部CD变化，并使用面积CD和平滑方法来测量掩模和晶圆上的CD，评估了掩模的整体CD与晶圆的场CD的相关性。通过这些方法，可以提高CD测量的可重复性，从而使掩模和晶圆之间的关系更加紧密。紧密相关可以在掩模上进行精细的CD校正，从而在晶片上获得更好的场CD均匀性。并根据CD-SEM的测量工具和散射法对晶片的场对场CD均匀性的可重复性进行了评估。

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