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首页> 外文会议>Photomask and Next-Generation Lithography Mask Technology XIV pt.2; Proceedings of SPIE-The International Society for Optical Engineering; vol.6607 pt.2 >Development of a captured image simulator for 199 nm mask inspection tools
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Development of a captured image simulator for 199 nm mask inspection tools

机译：开发用于199 nm掩模检测工具的捕获图像模拟器

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Recently, technologies of ArF laser exposure tools and alternating phase shifting masks (Alt-PSM) are expected to be used in actual production. To utilize such newly developed technologies, it is inevitable to develop a mask inspection technology to check them properly. But it is currently difficult to check them precisely because sufficient image contrast is hard to obtain with any conventional mask inspection tools. It is not well understood whether we can get sufficient sensitivity with conventional optical setups and wavelength with the assistance of some kind of resolution enhancement techniques (RET), or we should move toward inspection using revolutionary new optics or shorter inspection wavelength. To study precisely the sensitivity of inspection optics for common types of defects, we have made a captured image simulator based on the RCWA (Rigorous Coupled Wave Analysis) method with which we can take into account the effect of the three-dimensional structure of a mask. We tried to calculate captured images for some mask structures at two different wavelengths, namely 199 nm and 257 nm. We made certain that no significant differences were observed for larger scale defects, but that a considerable difference of image contrast was observed for small scale defects around 50 nm in size. Thus we confirmed that this simulator is effective for evaluating and designing optical systems of mask inspectors, in order to achieve a high sensitivity for the detection of small defects in Alt-PSMs.
机译：近来，期望在实际生产中使用ArF激光曝光工具和交替相移掩模（Alt-PSM）的技术。为了利用这种新开发的技术，不可避免地要开发一种掩模检查技术以正确地检查它们。但是目前很难精确地检查它们，因为用任何常规的掩模检查工具都难以获得足够的图像对比度。尚不清楚我们是否可以借助某种分辨率增强技术（RET）在常规光学设置和波长下获得足够的灵敏度，还是应该转向使用革命性的新光学器件或更短的检查波长进行检查。为了精确研究检测光学元件对常见缺陷类型的灵敏度，我们基于RCWA（严格耦合波分析）方法制作了一个捕获图像模拟器，利用该模拟器我们可以考虑掩模的三维结构的影响。我们试图计算一些在两种不同波长（即199 nm和257 nm）下的掩模结构的捕获图像。我们确定，对于较大尺寸的缺陷，没有观察到显着差异，但是对于尺寸约为50 nm的小尺寸缺陷，则观察到了图像对比度的显着差异。因此，我们证实了该模拟器对于评估和设计口罩检查器的光学系统是有效的，以实现用于检测Alt-PSM中小的缺陷的高灵敏度。

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