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Current-voltage Curves of PV Metamaterial Based on the Nanostructured Si

机译:基于纳米结构硅的光伏超材料的电流-电压曲线

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Nanostructured Si devices based on a nanoscale Si-layered system may constitute an interesting system for enlarging optical and electrical functions in Si optoelectronic technology. Strong enough physical interactions transform the initial material, without changing its chemical composition, leading to a Si metamaterial. We report here some specific electrical properties which illustrate the complexity of the electron transport in test structures. /- V measurements on samples differentiated exclusively by their surface features are given for PV and photodiode modes as well as time-resolved current collection under stabilized voltage. The measurements have been carried out over a large range of solar light excitation intensities.
机译:基于纳米级硅层系统的纳米结构硅器件可以构成一个有趣的系统,用于扩大硅光电技术中的光学和电学功能。足够强的物理相互作用可改变初始材料,而无需改变其化学成分,从而形成Si超材料。我们在这里报告了一些特定的电性能,这些电性能说明了测试结构中电子传输的复杂性。对PV和光电二极管模式以及在稳定电压下经过时间分辨的电流收集,给出了仅由其表面特征区分的样品的V测量值。已经在大范围的太阳光激发强度上进行了测量。

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