• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE >Multi-junction solar cell design using strain balanced dilute nitride quantum wells
【24h】

Multi-junction solar cell design using strain balanced dilute nitride quantum wells

机译：使用应变平衡稀氮化物量子阱的多结太阳能电池设计

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

For over a decade various schemes, involving the use of bulk-like 1.0-1.2 eV Ga(In)NAs subcells, have been contemplated to further enhance the efficiency of existing triple and quadruple junction solar cells[1] which are mainly limited by the poor carrier properties of bulk dilute nitrides [2]. Previously [3] we had considered an alternate path toward the realization of 1.1eV solar cells where dilute nitride quantum wells with thicknesses much smaller than the minority carrier diffusion length are utilized in the GaAs solar cell. In this work we have modified this design by taking into account the strain effects via strain balancing with GaAsSb, and also the effect of the electric field on the QW energy and absorption characteristics. The results for triple junction solar cells encompassing these MQW in the GaAs sub-cells (~ 1.1 eV) under 500 suns at AM1.5 show possibilities for reaching photoconversion efficiencies in excess of 45%, while reaching upto 40% under AM1.5 for the quadruple junction configuration (GaInP, GaAs, GaAsN/GaAsSb, Ge).
机译：在过去的十多年中，人们已经考虑了各种方案，包括使用类似体积的1.0-1.2 eV Ga（In）NAs子电池，以进一步提高现有的三重和四重结太阳能电池的效率[1]，而三重和四重结太阳能电池主要受到该技术的限制。稀氮化物的载流子性能较差[2]。以前[3]，我们曾考虑过一条实现1.1eV太阳能电池的替代途径，其中在GaAs太阳能电池中使用厚度比少数载流子扩散长度小得多的稀氮化物量子阱。在这项工作中，我们通过考虑与GaAsSb的应变平衡产生的应变效应，以及电场对QW能量和吸收特性的影响，对这种设计进行了修改。在500个太阳下，在AM1.5下，GaAs子电池（〜1.1 eV）中包含这些MQW的三结太阳能电池的结果表明，有可能达到超过45％的光转换效率，而在AM1.5下达到40％的光转换效率四重结结构（GaInP，GaAs，GaAsN / GaAsSb，Ge）。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号