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首页> 外文会议>Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE >Cu-In-Ga metal precursors sputter deposited from a single ternary target for Cu(lnGa)(SeS)2 film formation
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Cu-In-Ga metal precursors sputter deposited from a single ternary target for Cu(lnGa)(SeS)2 film formation

机译：从单个三元靶溅射沉积的Cu-In-Ga金属前驱物以形成Cu（InGa）（SeS）2

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摘要

Precursor films used for the growth of Cu(InGa)Se2 were sputter deposited from a single Cu-In-Ga compound target to determine if better control of composition and improved reproducibility compared to precursors deposited from separate sputter targets could be obtained. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize changes in phase and morphology of the ternary sputter target, precursor films, and reacted films over a series of deposition runs and compared with films deposited from two targets. The surface morphology and composition of the target and precursor films were characterized over a range of sputtering conditions and compared to the bulk target composition over time. The precursor films contain Cu9(In1-xGax)4 and In phases with In-rich nodules. The target has a Cu-rich surface composition compared to the bulk that indicates preferential sputtering of In. Cu(InGa)(SeS)2 films were formed by a three-step H2Se/Ar/H2S reaction process. The composition of reacted films using ternary target precursors is comparable to the bulk target composition and good reproducibility is demonstrated. Finally, solar cells fabricated using the reacted films gave a maximum efficiency of 13.4%.
机译：从单个Cu-In-Ga复合靶溅射沉积用于生长Cu（InGa）Se2的前体薄膜，以确定与从单独溅射靶沉积的前体相比，是否可以获得更好的成分控制和更高的重现性。使用X射线衍射（XRD）和扫描电子显微镜（SEM）来表征三元溅射靶，前驱膜和反应膜在一系列沉积过程中的相态和形态变化，并与从两个靶沉积的膜进行比较。在一定范围的溅射条件下表征靶和前体膜的表面形态和组成，并随时间与本体靶组成进行比较。前体膜包含Cu9（In1-xGax）4和In相，其中In结节丰富。与本体相比，靶材具有富含Cu的表面成分，表明In优先溅射。通过三步H2Se / Ar / H2S反应工艺形成Cu（InGa）（SeS）2膜。使用三元靶前体的反应膜的组成与整体靶组成相当，并且显示出良好的再现性。最后，使用反应膜制造的太阳能电池的最大效率为13.4％。

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