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首页> 外文会议>Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE >Surface characterization of (AgCu)(InGa)Se2 thin films for solar cells
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Surface characterization of (AgCu)(InGa)Se2 thin films for solar cells

机译：太阳能电池用（AgCu）（InGa）Se2薄膜的表面表征

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摘要

AgCu(InGa)Se2 alloy absorber layers with various Ga/(Ga+In) and Ag/(Ag+Cu) ratios were deposited using multi-source elemental evaporation and analyzed by glancing incidence x-ray diffraction and energy dispersive x-ray spectroscopy. All films exhibit satellite chalcopyrite reflections in the x-ray diffraction pattern and films with 0.5 ≤ Ga <; 1 and Ag >; 0.5 have additional reflections consistent with an ordered defect phase which is limited to the near-surface region of the film. X-ray photoelectron spectroscopy results show that all films have low (Ag+Cu)/Se ratios near the surface, consistent with an ordered defect compound. Films with 0 <; w <; 1 have (Ag+Cu)/Se and (Ag+Cu)/(Ga+In) ratios at the surface close to the (AgCu)(InGa)5Se8 ordered defect phases. Additionally the near-surface region of (AgCu)(InGa)Se2 films contains a higher Ag/(Ag+Cu) ratio than the bulk and the Ag(InGa)Se2 film contains excess Ag near the surface.
机译：使用多源元素蒸发沉积具有不同Ga /（Ga + In）和Ag /（Ag + Cu）比的AgCu（InGa）Se2合金吸收层，并通过掠射式X射线衍射和能量色散X射线光谱分析。所有薄膜在X射线衍射图中均显示出卫星黄铜矿反射，且0.5≤Ga <; 1和Ag>; 0.5具有与有序缺陷相一致的附加反射，该缺陷相限于膜的近表面区域。 X射线光电子能谱结果表明，所有薄膜在表面附近具有较低的（Ag + Cu）/ Se比，这与有序的缺陷化合物一致。 0 <;的电影w <; 1在接近（AgCu）（InGa）5Se8有序缺陷相的表面具有（Ag + Cu）/ Se和（Ag + Cu）/（Ga + In）比。另外，（AgCu）（InGa）Se2膜的近表面区域包含比块体更高的Ag /（Ag + Cu）比，并且Ag（InGa）Se2膜在表面附近包含过量的Ag。

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