Impact of the carrier relaxation paths on two-state operation in quantum dot lasers

著录项

• 来源
  《Physics and simulation of optoelectronic devices XXIII》|2015年|93570K.1-93570K.6|共6页
• 会议地点 San Francisco CA(US)
• 作者

  G. S. Sokolovskii; V. V. Dudelev; E. D. Kolykhalova; K.K.Soboleva; A.G. Deryagin; I.I. Novikov; M.V. Maximov; A.E. Zhukov; V.M. Ustinov; V.I. Kuchinskii; W.Sibbett; E.U. Rafailov; E.A. Viktorov; T. Erneux;

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• 作者单位

  Ioffe Physical-Technical Institute, St. Petersburg, Russia;

  Ioffe Physical-Technical Institute, St. Petersburg, Russia;

  St.Petersburg State Electrotechnical University 'LETI', Saint Petersburg, Russia;

  St.Petersburg State Polytechnical University, St. Petersburg, Russia;

  Ioffe Physical-Technical Institute, St. Petersburg, Russia;

  Ioffe Physical-Technical Institute, St. Petersburg, Russia;

  Ioffe Physical-Technical Institute, St. Petersburg, Russia;

  Academic University, St. Petersburg, Russia;

  Ioffe Physical-Technical Institute, St. Petersburg, Russia;

  Ioffe Physical-Technical Institute, St. Petersburg, Russia;

  University of St. Andrews, St. Andrews, UK;

  Aston Institute of Photonic Technologies, Aston University, Birmingham, UK;

  National Research University of Information Technologies, Mechanics and Optics, Saint Petersburg, Russia,Optique Nonlineaire Theorique, Campus Plaine, CP 231, 1050 Bruxelles, Belgium;

  Optique Nonlineaire Theorique, Campus Plaine, CP 231, 1050 Bruxelles, Belgium;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Qunatum dots; laser diodes; two-state operation; relaxation oscillations;

  机译：量子点;激光二极管二态操作；弛豫振荡;