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Polarization-dependent photocurrent in MoS_2 phototransistor

机译：MoS_2光电晶体管中与极化有关的光电流

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摘要

Monolayer or few-layer molybdenum disulfide (MoS_2) has attracted increasing interests in studying light-induced electronic effect due to its prominent photo-responsivity at visible spectral range, fast photo-switching rate and high channel mobility. However, the atomically thin layers make the interaction between light and matter much weaker than that in bulk state, hampering its application in two-dimensional material optoelectronics. One of recent efforts was to utilize resonantly enhanced localized surface plasmon for boosting light-matter interaction in MoS_2 thin layer phototransistor. Randomly deposited metallic nano-particles were previously reported to modify surface of a back-gated MoS_2 transistor for increasing light absorption cross-section of the phototransistor. Wavelength-dependent photocurrent enhancement was observed. In this paper, we report on a back-gated multilayer MoS_2 field-effect-transistor (FET), whose surface is decorated with oriented gold nanobar array, of which the size of a single nanobar is 60nm:60nm:120nm. With these oriented nanostructures, photocurrent of the MoS_2 FET could be successfully manipulated by a linear polarized incident 633nm laser, which fell into the resonance band of nanobar structure. We find that the drain-source current follows cos~2θ relationship with respect to the incident polarization angle. We attribute the polarization modulation effect to the localized enhancement nature of gold nanobar layer, where the plasmon enhancement occurs only when the polarization of incident laser parallels to the longitudinal axis of nanobars and when the incident wavelength matches the resonance absorption of nanobars simultaneously. Our results indicate a promising application of polarization-dependent plasmonic manipulation in two-dimension semiconductor materials and devices.
机译：单层或几层二硫化钼（MoS_2）由于在可见光谱范围内具有显着的光响应性，快速的光开关速率和高的通道迁移率，因此在研究光诱导电子效应方面引起了越来越多的兴趣。但是，原子薄层使光与物质之间的相互作用比体态中的弱得多，这妨碍了其在二维材料光电中的应用。最近的一项工作是利用共振增强的局部表面等离子体激元来增强MoS_2薄层光电晶体管中的物质相互作用。先前已经报道了随机沉积的金属纳米粒子可修饰背栅MoS_2晶体管的表面，以增加光电晶体管的光吸收截面。观察到波长依赖性光电流增强。在本文中，我们报告了一种背栅多层MoS_2场效应晶体管（FET），其表面由定向金纳米棒阵列装饰，单个金纳米棒的尺寸为60nm：60nm：120nm。通过这些定向的纳米结构，MoS_2 FET的光电流可以通过线性偏振入射633nm激光成功操纵，该激光进入纳米棒结构的共振带。我们发现，漏源电流相对于入射极化角遵循cos〜2θ关系。我们将偏振调制效应归因于金纳米棒层的局部增强性质，其中仅当入射激光的偏振平行于纳米棒的纵轴且入射波长同时与纳米棒的共振吸收相匹配时，才会发生等离激元增强。我们的结果表明在二维半导体材料和器件中偏振相关的等离激元操纵的有前途的应用。

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  • 来源
  • 会议地点 San Francisco CA(US)
  • 作者

    Jiu Li; Wentao Yu; Saisai Chu; Hong Yang; Kebin Shi; Qihuang Gong;

  • 作者单位

    State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University 5 Yiheyuan Road, Beijing 100871, China;

    State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University 5 Yiheyuan Road, Beijing 100871, China;

    State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University 5 Yiheyuan Road, Beijing 100871, China;

    State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University 5 Yiheyuan Road, Beijing 100871, China;

    State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University 5 Yiheyuan Road, Beijing 100871, China,Collaborative Innovation Center of Quantum Matter, Beijing, China 5 Yiheyuan Road, Beijing 100871, China;

    State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University 5 Yiheyuan Road, Beijing 100871, China,Collaborative Innovation Center of Quantum Matter, Beijing, China 5 Yiheyuan Road, Beijing 100871, China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    molybdenum disulfide (MoS_2); field-effect-transistor (FET); localized surface plasmon;

    机译：二硫化钼（MoS_2）;场效应晶体管（FET）;局部表面等离子体激元;

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