Optoelectronic Properties of Graphene on Silicon Substrate: Effect of Defects in Graphene

机译：硅衬底上石墨烯的光电性能：石墨烯中缺陷的影响

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Engineering of electronic energy band structure in graphene based nanostructures has several potential applications. Substrate induced bandgap opening in graphene results several optoelectronic properties due to the inter-band transitions. Various defects like structures, including Stone-Walls and higher-order defects are observed when a graphene sheet is exfoliated from graphite and in many other growth conditions. Existence of defect in graphene based nanostructures may cause changes in optoelectronic properties. Defect engineered graphene on silicon system are considered in this paper to study the tunability of optoelectronic properties. Graphene on silicon atomic system is equilibrated using molecular dynamics simulation scheme. Based on this study, we confirm the existence of a stable super-lattice. Density functional calculations are employed to determine the energy band structure for the super-lattice. Increase in the optical energy bandgap is observed with increasing of order of the complexity in the defect structure. Optical conductivity is computed as a function of incident electromagnetic energy which is also increasing with increase in the defect order. Tunability in optoelectronic properties will be useful in understanding graphene based design of photodetectors, photodiodes and tunnelling transistors.

机译：基于石墨烯的纳米结构中电子能带结构的工程设计具有多种潜在应用。由于带间跃迁，衬底在石墨烯中引起的带隙开口导致了几种光电特性。当石墨烯片从石墨上剥落时以及在许多其他生长条件下，会观察到各种缺陷，如结构缺陷，包括石墙和高阶缺陷。石墨烯基纳米结构中缺陷的存在可能会导致光电性能发生变化。本文考虑了在硅系统上设计缺陷的石墨烯，以研究光电子性能的可调性。使用分子动力学模拟方案平衡了硅原子上的石墨烯。根据这项研究，我们确定了稳定的超晶格的存在。密度泛函计算用于确定超晶格的能带结构。随着缺陷结构的复杂度增加，观察到光能带隙的增加。根据入射电磁能计算光导率，入射电磁能也随缺陷顺序的增加而增加。光电性能的可调节性将有助于理解基于石墨烯的光电探测器，光电二极管和隧穿晶体管的设计。

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来源
《Physics and simulation of optoelectronic devices XXIII》|2015年|93571X.1-93571X.6|共6页
会议地点 San Francisco CA(US)
作者
Brahmanandam Javvaji; M. Ajmalghan; D. Roy Mahapatra; M.R. Rahman; G.M. Hegde;
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作者单位

Department of Aerospace Engineering, Indian Institute of Science, Bengaluru-560012, India;

Department of Aerospace Engineering, Indian Institute of Science, Bengaluru-560012, India,Department of Metallurgical and Materials Engineering, NIT Surathkal 575025, India;

Department of Aerospace Engineering, Indian Institute of Science, Bengaluru-560012, India;

Department of Metallurgical and Materials Engineering, NIT Surathkal 575025, India;

Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru 560012, India;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Graphene; silicon; defects; electronic band structure; density of states; bandgap; optical conductivity;

机译：石墨烯硅;缺陷电子带结构；国家密度；带隙光导率;

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1. Investigation of boron modified graphene nanostructures; optoelectronic properties of graphene nanoparticles and transport properties of graphene nanosheets [J] . Armakovic Stevan, Armakovic Sanja J. The journal of physics and chemistry of solids . 2016,第Null期

机译：硼改性石墨烯纳米结构的研究;石墨烯纳米粒子的光电特性和石墨烯纳米片的传输特性
2. Terahertz Optoelectronic Property of Graphene: Substrate-Induced Effects on Plasmonic Characteristics [J] . I-Tan Lin, Jia-Ming Liu, Kuang-Hsiung Wu, Applied Sciences . 2014,第1期

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3. Contact properties to CVD-graphene on GaAs substrates for optoelectronic applications [J] . A V Babichev, V E Gasumyants, A Yu Egorov, Nanotechnology . 2014,第33期

机译：GaAs衬底上用于光电应用的CVD石墨烯的接触特性
4. Optoelectronic Properties of Graphene on Silicon Substrate: Effect of Defects in Graphene [C] . Brahmanandam Javvaji, M. Ajmalghan, D. Roy Mahapatra, Conference on physics and simulation of optoelectronic devices XXIII . 2015

机译：石墨烯对硅衬底的光电性质：石墨烯中缺陷的影响
5. Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes [D] . Sinha, Dhiraj P. 2014

机译：支持石墨烯界面的基本研究：石墨烯场效应晶体管（FET）中缺陷密度和理想石墨烯 - 硅肖丝狄克二极管
6. Effect of graphene oxide ratio on the cell adhesion and growth behavior on a graphene oxide-coated silicon substrate [O] . Jin-Tak Jeong, Mun-Ki Choi, Yumin Sim, -1

机译：氧化石墨烯比例对氧化石墨烯包覆的硅基板上细胞粘附和生长行为的影响
7. Terahertz Optoelectronic Property of Graphene: Substrate-Induced Effects on Plasmonic Characteristics [O] . I-Tan Lin, Yi-Ping Lai, Kuang-Hsiung Wu, 2014

机译：石墨烯的太赫兹光电性质：衬底对等离子体特性的影响

Optoelectronic Properties of Graphene on Silicon Substrate: Effect of Defects in Graphene

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