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首页> 外文会议>Physics, simulation, and photonic engineering of photovoltaic devices II >Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors
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Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

机译：使用CdS量子点和分布式布拉格反射器提高InGaN / GaN多量子阱太阳能电池的效率

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摘要

In recent year, InGaN-based alloy was also considered for photovoltaic devices owing to the distinctive material properties which are benefit photovoltaic performance. However, the Indium tin oxide (ITO) layer on top, which plays a role of transparent conductive oxide (TCO), can absorb UV photons without generating photocurrent. Also, the thin absorber layer in the device, which is consequent result after compromising with limited crystal quality, has caused insufficient light absorption. In this report, we propose an approach for solving these problems. A hybrid design of InGaN/GaN multiple quantum wells (MQWs) solar cells combined with colloidal CdS quantum dots (QDs) and back side distributed Bragg reflectors (DBRs) has been demonstrated. CdS QDs provide down-conversion effect at UV regime to avoid absorption of ITO. Moreover, CdS QDs also exhibit anti-reflective feature. DBRs at the back side have effectively reflected the light back into the absorber layer. CdS QDs enhance the external quantum efficiency (EQE) for light with wavelength shorter than 400 nm, while DBRs provide a broad band enhancement in EQE, especially within the region of 400 nm ～ 430 nm in wavelength. CdS QDs effectively achieved a power conversion efficiency enhancement as high as 7.2% compared to the device without assistance of CdS QDs. With the participation of DBRs, the power conversion efficiency enhancement has been further boosted to 14%. We believe that the hybrid design of InGaN/GaN MQWs solar cells with QDs and DBRs can be a method for high efficiency InGaN/GaN MQWs solar cells.
机译：近年来，由于独特的材料特性有利于光伏性能，InGaN基合金也被考虑用于光伏器件。但是，顶部的铟锡氧化物（ITO）层起着透明导电氧化物（TCO）的作用，可以吸收UV光子而不会产生光电流。而且，器件中的薄吸收层是在有限的晶体质量折衷之后的结果，导致光吸收不足。在本报告中，我们提出了解决这些问题的方法。已经证明了InGaN / GaN多量子阱（MQW）太阳能电池与胶体CdS量子点（QD）和背面分布式布拉格反射器（DBR）的混合设计。 CdS量子点在UV态下提供下转换效应，以避免ITO的吸收。此外，CdS量子点还具有抗反射功能。背面的DBR有效地将光反射回了吸收层。 CdS QD增强了波长小于400 nm的光的外部量子效率（EQE），而DBR提供了EQE的宽带增强，尤其是在400 nm〜430 nm波长范围内。与不使用CdS QD的设备相比，CdS QD的功率转换效率有效提高了7.2％。在DBR的参与下，功率转换效率的提高进一步提高到14％。我们认为，具有QD和DBR的InGaN / GaN MQW太阳能电池的混合设计可以成为实现高效率InGaN / GaN MQW太阳能电池的方法。

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  • 会议地点 San Francisco CA(US)
  • 作者

    Yu-Lin Tsai; Chien-Chung Lin; Hau-Vei Han; Hsin-Chu Chen; Kuo-Ju Chen; Wei-Chi Lai; Jin-Kong Sheu; Fang-I Lai; Peichen Yu; Hao-Chung Kuo;

  • 作者单位

    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.;

    Institute of Photonic System, College of Photonics, National Chiao-Tung University, Tainan 71150, Taiwan, R.O.C.;

    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.;

    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.;

    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.;

    Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.;

    Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.;

    Department of Photonics Engineering, Yuan-Ze University, Taoyuan 32070, Taiwan, R.O.C.;

    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.;

    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    InGaN multiple quantum well solar cells; quantum dots; luminescent down shifting; anti-reflection;

    机译：InGaN多量子阱太阳能电池；量子点;发光下移防反射;

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