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首页> 外文会议>Physics, simulation, and photonic engineering of photovoltaic devices II >Physics of Cu(In,Ga)Se_2 microcells under ultrahigh illumination intensities
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Physics of Cu(In,Ga)Se_2 microcells under ultrahigh illumination intensities

机译：超高光照强度下Cu（In，Ga）Se_2微电池的物理学

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摘要

In order to develop photovoltaic devices with increased efficiency using less rare semiconductor materials, the concentrating approach was applied on Cu(In,Ga)Se_2 thin film devices. Microscale solar cells down to a few micrometers wide were fabricated. They show, at around ×475, an efficiency of 21.3%, thanks to concentrated illumination (532 nm laser), compared to 16% efficiency under non-concentrated illumination. Due to the miniaturization, ultrahigh fluxes can be studied (＞ × 1000), without damaging the device. We analyse the high concentration regime of these micro-devices. Under ultrahigh light fluxes the collection efficiency decreases on certain devices. We attribute this effect to the screening of the electric field at the junction under high illumination. Numerical simulations of p-n junctions under intense fluxes corroborate this hypothesis. We built a homemade finite element method program, solving Poisson and continuity equations without resorting to the minority carrier approximation. We study the electric field at a p-n junction as a function of illumination intensity, and highlight the screening phenomena. Cu(In,Ga)Se2 thin films prove to be appropriate for a use under concentration, leading to significant gains in terms of efficiency and material usage. On these particular devices, ultrahigh illuminations can be used and the electric regime studied.
机译：为了使用较少见的半导体材料开发具有更高效率的光伏器件，将集中方法应用于Cu（In，Ga）Se_2薄膜器件。制造了小到几微米宽的微型太阳能电池。由于集中照明（532 nm激光），它们的效率约为×475，效率为21.3％，而非集中照明的效率为16％。由于小型化，可以研究超高通量（>×1000），而不会损坏设备。我们分析了这些微型设备的高浓度机制。在超高光通量下，某些设备上的收集效率会降低。我们将此效应归因于在高光照下对结处电场的屏蔽。强通量下p-n结的数值模拟证实了这一假设。我们构建了一个自制的有限元方法程序，无需使用少数载波逼近即可求解泊松和连续性方程。我们研究了p-n结处的电场与照明强度的关系，并强调了屏蔽现象。事实证明，Cu（In，Ga）Se2薄膜适合在浓缩条件下使用，从而在效率和材料使用方面带来了明显的收益。在这些特定的设备上，可以使用超高照度并研究电状态。

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  • 会议地点 San Francisco CA(US)
  • 作者

    M. Paire; L.Lombez; F. Donsanti; M. Jubault; S. Collin; JL. Pelouard; D. Lincot; JF. Guillemoles;

  • 作者单位

    EDF RD, Institut de Recherche et Developpement sur l'Energie Photovoltaieque (IRDEP), 6 quai Watier, 78401 Chatou, France,CNRS - IRDEP, 78401 Chatou, France,Chimie ParisTech - IRDEP 75005 Paris, France;

    EDF RD, Institut de Recherche et Developpement sur l'Energie Photovoltaieque (IRDEP), 6 quai Watier, 78401 Chatou, France,CNRS - IRDEP, 78401 Chatou, France,Chimie ParisTech - IRDEP 75005 Paris, France;

    EDF RD, Institut de Recherche et Developpement sur l'Energie Photovoltaieque (IRDEP), 6 quai Watier, 78401 Chatou, France,CNRS - IRDEP, 78401 Chatou, France,Chimie ParisTech - IRDEP 75005 Paris, France;

    EDF RD, Institut de Recherche et Developpement sur l'Energie Photovoltaieque (IRDEP), 6 quai Watier, 78401 Chatou, France,CNRS - IRDEP, 78401 Chatou, France,Chimie ParisTech - IRDEP 75005 Paris, France;

    CNRS, Laboratoire de Photonique et de Nanostructures (LPN ), Route de Nozay, 91460 Marcoussis, FRANCE;

    CNRS, Laboratoire de Photonique et de Nanostructures (LPN ), Route de Nozay, 91460 Marcoussis, FRANCE;

    EDF RD, Institut de Recherche et Developpement sur l'Energie Photovoltaieque (IRDEP), 6 quai Watier, 78401 Chatou, France,CNRS - IRDEP, 78401 Chatou, France,Chimie ParisTech - IRDEP 75005 Paris, France;

    EDF RD, Institut de Recherche et Developpement sur l'Energie Photovoltaieque (IRDEP), 6 quai Watier, 78401 Chatou, France,CNRS - IRDEP, 78401 Chatou, France,Chimie ParisTech - IRDEP 75005 Paris, France;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Photovoltaics; Concentration; Microscale Solar cell; Cu(In; Ga)Se_2; Screening effect;

    机译：光伏；浓度;微型太阳能电池； Cu（In; Ga）Se_2;筛选效果;

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