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首页> 外文会议>Physics, simulation, and photonic engineering of photovoltaic devices II >Silicon Rich Carbide as a Conductive Substrate for Si QD Solar Cells
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Silicon Rich Carbide as a Conductive Substrate for Si QD Solar Cells

机译：富碳化硅作为Si QD太阳能电池的导电基底

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Silicon quantum dot (Si QD) tandem solar cell is a promising cell structure for realising high efficiency at low cost. The tandem solar cell effectively harnesses energy from the solar spectrum by stacking two or more cells together in the order of descending band gaps. Due to quantum confinement, the band gap of silicon based nanostructures such as Si QDs can be tailored by varying the size of the QDs. Solar cells and light emitting diodes based on Si QDs have been realised in experiments. However, current crowding due to high lateral resistance remains to be a major problem for Si QD devices grown on quartz substrates. Annealed silicon rich carbide (SRC), owing to its electrical conductivity, thermal stability and energy band gap compatible with Si QD cell fabrication, has the potential to overcome this problem. Further, this quasi-transparent thin-film can be used as either substrate or superstrate of a Si QD solar cell and therefore provides flexibility in cell structure design. Here, we investigate the physical, optical and electrical properties of the new material as functions of silicon concentration and doping conditions via a number of characterisation techniques including X-ray diffraction, Raman spectroscopy, ultraviolet-visible-infrared spectroscopy and four-point probe measurement. Some discoveries, including the lower crystallisation temperature of SiC within SRC, are also discussed. The research may provide some insight into the optimisation of annealed SRC as the new conductive material for Si QD solar cell and may boost the final arrival of all-silicon tandem solar cell.
机译：硅量子点（Si QD）串联太阳能电池是一种有希望以低成本实现高效率的电池结构。串联太阳能电池通过按带隙下降的顺序将两个或多个电池堆叠在一起，有效地利用了太阳光谱中的能量。由于量子限制，可以通过改变QD的尺寸来定制基于硅的纳米结构（例如Si QD）的带隙。在实验中已经实现了基于Si QD的太阳能电池和发光二极管。然而，对于在石英衬底上生长的Si QD器件而言，由于高横向电阻引起的电流拥挤仍然是主要问题。退火的富硅碳化物（SRC）由于其导电性，热稳定性和与Si QD电池制造兼容的能带隙而具有克服这一问题的潜力。此外，该准透明薄膜可以用作Si QD太阳能电池的基板或上层基板，因此在电池结构设计中提供了灵活性。在这里，我们通过许多表征技术，包括X射线衍射，拉曼光谱，紫外可见红外光谱和四点探针测量，研究了新材料的物理，光学和电学性质随硅浓度和掺杂条件的变化。 。还讨论了一些发现，包括SRC中SiC较低的结晶温度。该研究可能为优化退火SRC作为Si QD太阳能电池的新导电材料提供一些见识，并可能促进全硅串联太阳能电池的最终到货。

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