Zinc Oxide Nanowire Arrays for Photovoltaic and Light-emitting Devices

机译：用于光伏和发光设备的氧化锌纳米线阵列

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Knowledge of carrier transfer, in quantum dot sensitized solar cells, is the key to engineering the device structure and architecture optimization. In this work, Zinc oxide (ZnO) nanowire (NW) arrays were synthesized on glass wafers and on GaN thin films for application in photovoltaic and light-emitting devices. The nanowires grown on glass wafers were incorporated with CdSe/ZnS quantum dots (QD) and their steady state and lifetime photoluminescence (PL) were studied to investigate the feasibility of electron transfer from excited QDs to ZnO NWs. The results provide an indication that the injected electrons, from excited high quantum efficiency QDs, live longer and hence facilitate electron transport without undergoing non-radiative recombination at surface trap states. Morphology and optical properties of the ZnO nanowires on GaN film were also studied for application in light-emitting devices.

机译：量子点敏化太阳能电池中载流子转移的知识是设计器件结构和架构优化的关键。在这项工作中，在玻璃晶片和GaN薄膜上合成了氧化锌（ZnO）纳米线（NW）阵列，用于光伏和发光设备。将在玻璃晶片上生长的纳米线与CdSe / ZnS量子点（QD）结合，并研究了它们的稳态和寿命光致发光（PL），以研究电子从激发的QD转移到ZnO NW的可行性。结果表明，来自激发的高量子效率QD的注入电子的寿命更长，因此有助于电子传输，而不会在表面陷阱态发生非辐射复合。还研究了GaN膜上ZnO纳米线的形貌和光学性质，以用于发光器件中。

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《Physics, simulation, and photonic engineering of photovoltaic devices II》|2013年|86201Z.1-86201Z.9|共9页
会议地点 San Francisco CA(US)
作者
Bita Janfeshan; Bahareh Sadeghimakki; Navid M. S. Jahed; Siva Sivoththaman;
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作者单位

Centre for Advanced Photovoltaic Devices Systems, Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada;

Centre for Advanced Photovoltaic Devices Systems, Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada;

Centre for Advanced Photovoltaic Devices Systems, Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada;

Centre for Advanced Photovoltaic Devices Systems, Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada;

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正文语种 eng
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ZnO nanowires; hydrothermal growth; CdSe/ZnS quantum dot; quantum dot sensitized; photoluminescence lifetime; light-emitting diodes; advanced photovoltaics;

机译：ZnO纳米线；热液生长CdSe / ZnS量子点量子点敏化光致发光寿命发光二极管;先进的光伏;

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1. Nanowire and nanobelt arrays of zinc oxide from synthesis to properties and to novel devices [J] . Wang XD, Song JH, Wang ZL Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology . 2007,第8期

机译：氧化锌的纳米线和纳米带阵列，从合成到性能再到新型器件
2. Control of zinc oxide nanowire array properties with electron-beam lithography templating for photovoltaic applications [J] . Nicaise Samuel M., Cheng Jayce J., Kiani Amirreza, Nanotechnology . 2015,第7期

机译：利用电子束光刻模板控制光伏应用中的氧化锌纳米线阵列特性
3. Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes [J] . Ya-Qing Bie, Zhi-Min Liao, Peng-Wei Wang, Advanced Materials . 2010,第38期

机译：用于光伏器件和紫外发光二极管的单ZnO纳米线/ p型GaN异质结
4. Efficient photovoltaic devices using zinc oxide nanowires overlaid with conjugated polymers [C] . Zhang Xiao-zhou, Jian Xi-gao, Zu Li-wu International Conference on Mechatronics and Materials Engineering . 2012

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5. Zinc Oxide Nanowire Array-Based Optoelectronic Devices. [D] . Wang, Guoping. 2011

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Zinc Oxide Nanowire Arrays for Photovoltaic and Light-emitting Devices

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