Ohmic contacts to n-type GaSb grown on GaAs by the Interfacial Misfit Dislocation technique

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• 来源
  《Physics, simulation, and photonic engineering of photovoltaic devices II》|2013年|86201K.1-86201K.12|共12页
• 会议地点 San Francisco CA(US)
• 作者

  N. Rahimi; A. A. Aragon; O. S. Romero; D. M. Kim; N. B. J. Traynor; T. J. Rotter; G. Balakrishnan; S. D. Mukherjee; L. F. Lester;

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• 作者单位

  Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM, USA 87106;

  Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM, USA 87106;

  Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM, USA 87106;

  Virginia Polytechnic Institute and State University, 910 Drillfield Drive, Blacksburg, VA, USA 24061;

  The State University of New York at Geneseo, 1 College Circle, Geneseo, NY, USA 14454;

  Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM, USA 87106;

  Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM, USA 87106;

  Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM, USA 87106;

  Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM, USA 87106;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Ohmic contacts; GaSb; GaAs; Interfacial Misfit Dislocation; TLM pattern; Specific contact resistance;

  机译：欧姆接触；砷化镓;砷化镓;界面错位脱位； TLM模式；比接触电阻;