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首页> 外文会议>Physics and technology of high-k materials 9 >In-situ Deposited HfO_2 with Amorphous-Si Passivation as a Potential Gate Stack for High Mobility (In)GaSb- Based P-MOSFETs
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In-situ Deposited HfO_2 with Amorphous-Si Passivation as a Potential Gate Stack for High Mobility (In)GaSb- Based P-MOSFETs

机译：具有非晶硅钝化的原位沉积HfO_2作为高迁移率（In）GaSb基P-MOSFET的潜在栅极叠层

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摘要

Electrical and structural properties of GaSb metal-oxidesemiconductor capacitors with in-situ deposited HfO_2 gate dielectric and in-situ deposited amorphous silicon interface passivation layer are presented. Capacitance-voltage characteristics with low C-V stretch out, reduced hysteresis, lower EOT is obtained in a temperature range of 350℃-550℃ post deposition annealing in forming gas. The gate leakage current of the gate stack was ≤1 μA/cm~2. p-MOSFETs fabricated on epitaxially grown strained (In)GaSb quantum channel (ε=1.6%) channels using this all in-situ high-k gate stack showed a maximum I_(ON)=23mA/mm for a 3μm gate length device.
机译：提出了具有原位沉积HfO_2栅介质和原位沉积非晶硅界面钝化层的GaSb金属氧化物半导体电容器的电学和结构性能。在成型气体中进行沉积退火后，在350℃至550℃的温度范围内，电容电压特性具有较低的C-V延伸率，降低的磁滞和较低的EOT。栅极堆叠的栅极泄漏电流≤1μA/ cm〜2。使用这种全原位高k栅极堆叠在外延生长的应变（In）GaSb量子通道（ε= 1.6％）通道上制造的p-MOSFET对于3μm栅极长度的器件显示出最大I_（ON）= 23mA / mm。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    P. Nagaiah; V. Tokranov; M. Yakimov; S. Madisetti; A. Greene; S. Novak; R. Moore; H. Bakhru; S. Oktyabrsky;

  • 作者单位

    College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203;

    College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203;

    College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203;

    College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203;

    College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203;

    College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203;

    College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203;

    College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203;

    College of Nanoscale Science and Engineering, University at Albany-SUNY, NY 12203;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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