Size-Dependent Trapping Effect in Nano-Dot Non-Volatile Memory

机译：纳米点非易失性存储器中尺寸依赖的陷阱效应

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We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As~+ implantation to improve the device performance of MONOS CTF device. The TaN-[SiO_2-LaAlO_3]-[As~+-implanted Zr0N]-[LaAlO_3-SiO_2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85℃, and an endurance window of 5.1 V after 10~5 cycles under fast 100 μs and low ±16 V program/erase. The performance of As~+-implanted ZrON is significantly better than that of stacked Si_3N_4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.

机译：我们报告了一种闪存，该闪存使用通过As〜+注入在ZrON电荷陷阱层中形成的深陷阱纳米点来改善MONOS CTF器件的设备性能。 TaN- [SiO_2-LaAlO_3]-[As〜+注入的Zr0N]-[LaAlO_3-SiO_2] -Si器件的ENT值为6 nm，初始存储窗为9.8 V，10年外推保留窗为3.6在85℃时为V，在100 µs快速和低±16 V编程/擦除的情况下，经过10〜5个循环后的持久窗口为5.1V。 As〜+注入的ZrON的性能明显好于堆叠的Si_3N_4 / Ir-dot / HfON器件，该器件由于过量的Ir金属点而导致厚度缩放不佳。

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《Physics and technology of high-k materials 9》|2011年|p.121-132|共12页
会议地点 Boston MA(US);Boston MA(US)
作者
C. Y. Tsai; C. H. Cheng; T. Y. Chang; K. Y. Chou; Albert Chin; F. S. Yeh;
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Dept. of Electronics Engineering Institute of Electronics, National Chiao-Tung Univ., Hsinchu, Taiwan;

Dept. of Mechanical Eng., National Tsing-Hua Univ., Hsinchu, Taiwan;

Dept. of Electronics Engineering Institute of Electronics, National Chiao-Tung Univ., Hsinchu, Taiwan;

Dept. of Electronics Engineering Institute of Electronics, National Chiao-Tung Univ., Hsinchu, Taiwan;

Dept. of Electronics Engineering Institute of Electronics, National Chiao-Tung Univ., Hsinchu, Taiwan;

Dept. of Mechanical Eng., National Tsing-Hua Univ., Hsinchu, Taiwan;

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Size-Dependent Trapping Effect in Nano-Dot Non-Volatile Memory

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