Interaction of Aluminum Oxide with Germanium during Thermal Annealing in Ar, N_2/H_2,O_2, or H_2O

机译：Ar，N_2 / H_2，O_2或H_2O热退火过程中氧化铝与锗的相互作用

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Five-nanometer-thick Al_2O_3 films were deposited on Ge substrates by reactive sputtering and submitted to post-deposition annealings (PDAs) in argon, forming gas, oxygen, or water vapor at 350 or 500℃ for 30 min. Photoelectron spectroscopy evidenced that Ge was oxidized during the deposition process. Thermal annealing in argon or forming gas reduced the amount of oxidized Ge. Oxygen and water strongly interacted with the Ge substrate. Particularly for water at 500℃, ion scattering analyses evidenced the presence of Ge throughout the Al_2O_3 layer and on the sample surface. This was attributed to the formation and desorption of GeO from the dielectric/Ge interface.

机译：通过反应溅射将五纳米厚的Al_2O_3膜沉积在Ge衬底上，并在氩气中进行后沉积退火（PDA），在350或500℃下形成气体，氧气或水蒸气30分钟。光电子能谱证明，Ge在沉积过程中被氧化。在氩气中或在形成气体中进行热退火可以减少氧化锗的数量。氧气和水与Ge基质强烈相互作用。特别是对于500℃的水，离子散射分析表明在整个Al_2O_3层以及样品表面均存在Ge。这归因于GeO从电介质/ Ge界面的形成和脱附。

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《Physics and technology of high-k materials 9》|2011年|p.21-28|共8页
会议地点 Boston MA(US);Boston MA(US)
作者
C. Radtke; N.M. Bom; G.V. Soares; C. Krug; I.J.R. Baumvol;
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Instituto de Quimica and UFRGS, Porto Alegre, 91509-900, Brazil;

Institute de Fisica, UFRGS, Porto Alegre, 91509-900, Brazil;

Institute de Fisica, UFRGS, Porto Alegre, 91509-900, Brazil;

Institute de Fisica, UFRGS, Porto Alegre, 91509-900, Brazil;

Institute de Fisica, UFRGS, Porto Alegre, 91509-900, Brazil,Universidade de Caxias do Sul, Caxias do Sul, 95070-560, Brazil;

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2. Relaxation of H_2O from its |04 ~- vibrational state in collisions with H_2O,Ar,H_2,N_2,and O_2 [J] . Peter W.Barnes, Ian R.Sims, Ian W.M.Smith The Journal of Chemical Physics . 2004,第12期

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4. Interaction of Aluminum Oxide with Germanium during Thermal Annealing in Ar, N_2/H_2, O_2, or H_2O [C] . C. Radtke, N. M. Bom, G. V. Soares, International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice . 2011

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Interaction of Aluminum Oxide with Germanium during Thermal Annealing in Ar, N_2/H_2,O_2, or H_2O

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