• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Physics and technology of high-k materials 9 >Characteristics of Liquid-phase-deposited SrTiO_3 Films on GaN and AlGaN/GaN Wafer
【24h】

Characteristics of Liquid-phase-deposited SrTiO_3 Films on GaN and AlGaN/GaN Wafer

机译：GaN和AlGaN / GaN晶片上液相沉积SrTiO_3膜的特性

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Through a simple, low-temperature liquid-phase deposition (LPD) method, SrTiO_3 thin films were deposited on GaN as the gate dielectric for metal oxide semiconductor high electron mobility transistor application. X-ray photoelectron spectroscopy was employed to characterize the films. Electrical characteristics of the SrTiO_3 films on GaN showed that the lowest leakage current was 4.2×10~(-9) A/cm~2 at -1 MV/cm after annealing at 400℃. AlGaN/GaN MOSHEMTs with LPD-SrTiO_3 of 20 nm-thick as the gate dielectric were also fabricated. The suppressed gate leakage current improves both subthreshold slope and on/off current ratio. Wider gate voltage swing and flatter transconductance of the MOSHEMT demonstrate better device linearity.
机译：通过简单的低温液相沉积（LPD）方法，在GaN上沉积SrTiO_3薄膜作为金属氧化物半导体高电子迁移率晶体管应用的栅极电介质。 X射线光电子能谱用于表征膜。 GaN上SrTiO_3薄膜的电学特性表明，在400℃退火后，-1 MV / cm时最低漏电流为4.2×10〜（-9）A / cm〜2。还制造了厚度为20 nm的LPD-SrTiO_3作为栅极电介质的AlGaN / GaN MOSHEMT。抑制的栅极漏电流同时改善了亚阈值斜率和开/关电流比。 MOSHEMT的较宽的栅极电压摆幅和较平的跨导表现出更好的器件线性​​度。

著录项

  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    Tsu-Yi Wu; Po-Wen Sze; Chih-Chun Hu; Tong-Jyun Huang; Feri Adriyanto; Chang-Luen Wu; Yeong-Her Wang;

  • 作者单位

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;

    Department of Electrical Engineering, Kao-Yuan University, Lu-Chu,Kaoshiung, Taiwan;

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;

    Transcom Inc., Tainan, Taiwan;

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号