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Effect of Strain and Dimensionality on the Properties of Manganites

机译:应变和尺寸对锰矿性能的影响

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摘要

Strain and dimensional confinement can be used to tune magnetic and ferroelectric properties or enhance device performance. In epitaxial films, the different lattice spacing of an underlying substrate can be used to impose a biaxial strain. We have studied the effect of the substrate-induced biaxial strain on the electrical conductivity and magnetic properties of manganite compounds. Epitaxial (001) La_(0.7)Sr_(0.3)MnO_3 thin films have been grown by reactive molecular-beam epitaxy (MBE) on single crystalline substrates, varying the substrate-induced biaxial strain from -2.3% to +3.2%. The strain caused the Curie temperature to decrease by up to 100 K in very good agreement with the predictions of Millis et al. [A. J. Millis, T. Darling, and A. Migliori, J. Appl. Phys. 83, 1588 (1998)]. The effect of dimensional confinement on manganites was also investigated in thin films by synthesizing a superlattice of two formula-unit-thick layers of CaMnO_3 separated by CaO double layers, i.e., the n=2 Ruddlesden-Popper phase Ca_3Mn_2O_7. Magnetization measurements on 30 nm thick (001)-oriented Ca_3Mn_2O_7 thin films grown on (110) YAlO_3 substrates by MBE reveal a Neel transition temperature of T_N=115 K, similar to bulk Ca_3Mn_2O_7, but 10 K lower than thick CaMnO_3 films grown on this same substrate.
机译:应变和尺寸限制可用于调整磁和铁电特性或增强器件性能。在外延膜中,下层基板的不同晶格间距可用于施加双轴应变。我们已经研究了基质诱导的双轴应变对锰化合物的电导率和磁性的影响。外延(001)La_(0.7)Sr_(0.3)MnO_3薄膜已通过反应性分子束外延(MBE)在单晶衬底上生长,使衬底诱导的双轴应变从-2.3%变为+ 3.2%。应变使居里温度降低了100 K,这与Millis等人的预测非常吻合。 [一个。 J. Millis,T. Darling和A. Migliori,J. Appl。物理83,1588(1998)]。还通过合成由CaO双层隔开的两个分子式厚的CaMnO_3的超晶格,即n = 2 Ruddlesden-Popper相Ca_3Mn_2O_7的超晶格,在薄膜中研究了尺寸限制对锰的影响。通过MBE在(110)YAlO_3衬底上生长的30 nm厚(001)取向的Ca_3Mn_2O_7薄膜的磁化测量显示,Neel转变温度为T_N = 115 K,类似于块状Ca_3Mn_2O_7,但比在其上生长的厚CaMnO_3膜低10 K相同的基材。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者单位

    Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA;

    Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;

    Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853-1501, USA;

    Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853-1501, USA;

    School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853-1501, USA;

    Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA.,Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853-1501, USA;

    School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853-1501, USA.,Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853-1501, USA;

    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;

    Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;

    Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA.,Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853-1501, USA;

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  • 中图分类 半导体技术;
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