Fabrication of High-κ/Ge Stacks with High Quality GeO_2 Interlayer

机译：具有高质量GeO_2中间层的高κ/ Ge叠层的制备

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Fabrication of high-κ/Ge stacks with high quality interface layer was attempted using the combination of the formation of GeO_2 by low temperature oxidation to avoid GeO desorption at GeCVGe interface and the deposition of component metals of high-K material followed by O_2 annealing to have ideal V_(FB) value. The results indicate that a more favorable C-V characteristic of Al_2O_3 with GeO_2 as compared to HKV To understand this reason, the interaction between Al_2O_3 or HfO_2 with Ge and GeCVGe using XPS, AFM, SEM and C-V characteristics. The results indicate that the hillocks were formed by the Hf metal diffusion during the thermal treatment.

机译：尝试通过低温氧化形成GeO_2以避免GeO在GeCVGe界面上解吸，以及高K材料的成分金属沉积，然后进行O_2退火，以形成具有高质量界面层的高κ/ Ge叠层。具有理想的V_（FB）值。结果表明，与HKV相比，具有GeO_2的Al_2O_3具有更有利的C-V特性。为理解这一原因，利用XPS，AFM，SEM和C-V特性，研究了Al_2O_3或HfO_2与Ge和GeCVGe的相互作用。结果表明，在热处理过程中，小丘由the金属的扩散形成。

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来源
《Physics and technology of high-k materials 9》|2011年|p.29-37|共9页
会议地点 Boston MA(US);Boston MA(US)
作者
Y. Suzuki; Y. Oniki; Y. Iwazaki; T. Ueno;
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作者单位

Department of Electrical and Electronics Engineering Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-0012, Japan;

Department of Electrical and Electronics Engineering Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-0012, Japan;

Department of Electrical and Electronics Engineering Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-0012, Japan;

Department of Electrical and Electronics Engineering Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-0012, Japan;

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正文语种 eng
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2. Insights into thermal diffusion of germanium and oxygen atoms in HfO_2/GeO_2/Ge gate stacks and their suppressed reaction with atomically thin AlO_x interlayers [J] . Shingo Ogawa, Ryohei Asahara, Yuya Minoura, Journal of Applied Physics . 2015,第23期

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3. Optimisation and scaling of interfacial GeO_2 layers for high-K: gate stacks on germanium and extraction of dielectric constant of GeO_2 [J] . S.N.A. Murad, P.T. Baine, D.W. McNeill, Solid-State Electronics . 2012,第期

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4. Fabrication of High-κ/Ge Stacks with High Quality GeO_2 Interlayer [C] . Y. Suzuki, Y. Oniki, Y. Iwazaki, International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice . 2011

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Fabrication of High-κ/Ge Stacks with High Quality GeO_2 Interlayer

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