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首页> 外文会议>Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lethmann >Fabrication of Self-Organized Nanoporous Oxide Semiconductors by Anodization
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Fabrication of Self-Organized Nanoporous Oxide Semiconductors by Anodization

机译：阳极氧化法制备自组织纳米多孔氧化物半导体

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摘要

Self-organized nanoporous semiconductors such as ZnO and SnO_2 having high aspect ratio was prepared by a simple, high throughput and non-costly wet electrochemical process without use of catalyst. By using anodization of metal plate of zinc in sodium hydroxide solution, tubular oxide with a pore interval of 10-20 nm and the thickness up to several ten microns was obtained. Photocatalytic activity of anodic film on zinc was improved by increasing annealing temperature up to 400 ℃ associated with increasing crystallinity, although the specific surface area of the oxide film decreased as a result of decreasing grain size caused by sintering. Anodic film formed on tin in sodium hydroxide solution showed cellular structure with the size of 50 nm consisted of microcrystal and the thickness up to 60 μm in only 1 h. Photo catalytic activity of the anodic SnO_2 was ascertained by a methylene blue degradation test under UV irradiation. If sulfuric acid was used as an anodizing electrolyte for tin, a peculiar tubular film composed of mixture of crystalline SnO, SnO_2 and Sn_3O(OH)_2SO_4 was found.
机译：通过简单，高通量和无成本的湿式电化学工艺，无需使用催化剂即可制备具有高纵横比的自组织纳米多孔半导体，如ZnO和SnO_2。通过在氢氧化钠溶液中对锌的金属板进行阳极氧化，获得孔间距为10-20 nm，厚度最大为几十微米的管状氧化物。通过增加高达400℃的退火温度并提高结晶度，可以提高阳极膜对锌的光催化活性，尽管由于烧结引起的晶粒尺寸减小，氧化膜的比表面积却减小了。在氢氧化钠溶液中锡上形成的阳极膜表现出细胞结构，尺​​寸为50nm，由微晶组成，仅1小时厚度可达60μm。阳极SnO_2的光催化活性通过在紫外线照射下的亚甲基蓝降解测试确定。如果将硫酸用作锡的阳极氧化电解质，则会发现由结晶SnO，SnO_2和Sn_3O（OH）_2SO_4的混合物组成的特殊管状薄膜。

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  • 来源
  • 会议地点 HonoluluHI(US);Volker Lehmann and Vitali Parkhutik(US)
  • 作者

    Sachiko Ono; Yuta Kobayashi; Ryohei Kobayashi; Hidetaka Asoh;

  • 作者单位

    Department of Applied Chemistry, Faculty of Engineering, Kogakuin University 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan;

    Department of Applied Chemistry, Faculty of Engineering, Kogakuin University 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan;

    Department of Applied Chemistry, Faculty of Engineering, Kogakuin University 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan;

    Department of Applied Chemistry, Faculty of Engineering, Kogakuin University 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan;

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