Positron annihilation at planar defects in oxides

机译：氧化物中平面缺陷的正电子an没

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Planar defects may exhibit free volumes which, in principle, are detectable using positron annihilation spectroscopy. In this contribution, we present a preliminary theoretical study of positron trapping at stacking faults in zinc oxide and at a grain boundary in zirconia. In particular, we calculate the positron lifetime and positron binding energy to such defects. In the case of the grain boundary in zirconia, the influence of the yttrium segregation on the GB structure and positron characteristics is also examined. Calculated structural and positron characteristics are critically compared with experimental and other calculated data.

机译：平面缺陷可能会表现出自由体积，原则上可以使用正电子hil没光谱法检测到。在这项贡献中，我们提出了在氧化锌堆垛层错和氧化锆晶界处正电子俘获的初步理论研究。特别是，我们计算了此类缺陷的正电子寿命和正电子结合能。在氧化锆晶界的情况下，还研究了钇偏析对GB结构和正电子特性的影响。将计算的结构和正电子特性与实验数据和其他计算数据进行了严格比较。

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《Positron and positronium chemistry X》|2011年|240-244|共5页
会议地点 Smolenice Castle(SK)
作者
J. Kuriplach; O. Melikhova; J. Cizek; I. Prochazka; G. Brauer; W. Anwand;
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作者单位

Department of Low Temperature Physics, Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, CZ-18000 Prague, Czech Republic;

Department of Low Temperature Physics, Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, CZ-18000 Prague, Czech Republic;

Department of Low Temperature Physics, Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, CZ-18000 Prague, Czech Republic;

Department of Low Temperature Physics, Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, CZ-18000 Prague, Czech Republic;

Institut fuer Strahlenphysik, Helmholtz-Zentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden, Germany;

Institut fuer Strahlenphysik, Helmholtz-Zentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden, Germany;

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正文语种 eng
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关键词
zinc oxide; stacking fault; zirconia; grain boundary; planar defects; positron trapping;

机译：氧化锌堆垛层错氧化锆晶界;平面缺陷正电子陷阱;

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专利

1. Positron annihilation at planar defects in oxides [J] . J. Kuriplach, O. Melikhova, J. Cizek, Materials science forum . 2013,第期

机译：氧化物中平面缺陷的正电子an没
2. Metal oxide double layer capacitors by electrophoretic deposition of metal oxides. Fabrication, electrical characterization and defect analysis using positron annihilation spectroscopy [J] . Hoffman Rudolf C., Koslowski Nico, Sanctis Shawn, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2018,第35期

机译：金属氧化物双层电容通过电泳沉积金属氧化物。使用正电子湮没光谱法的制造，电学特性和缺陷分析
3. Internal defect structure of calcium doped magnesium oxide nanoparticles studied by positron annihilation spectroscopy [J] . A. Das, A. C. Mandal, S. Roy, AIP Advances . 2018,第9期

机译：正电子an没光谱研究钙掺杂氧化镁纳米粒子的内部缺陷结构
4. Positron annihilation at planar defects in oxides [C] . J. Kuriplach, O. Melikhova, J. Cizek, International workshop on positron and positronium chemistry . 2013

机译：正电子湮灭在氧化物中的平面缺陷
5. Investigation of positron and positronium annihilation for positrons colliding with nitrogen and carbon monoxide using the PsARS method . [D] . Miller, Erik. 2006

机译：用PsARS法研究正电子与氮和一氧化碳碰撞中的正电子和ron an灭。
6. Measurements of Defect Structures by Positron Annihilation Lifetime Spectroscopy of the Tellurite Glass 70TeO2-5XO-10P2O5-10ZnO-5PbF2 (X = Mg Bi2 Ti) Doped with Ions of the Rare Earth Element Er3+ [O] . K. Pach, J. Filipecki, E. Golis, 2017

机译：掺有稀土元素Er3 +的碲化物玻璃70TeO2-5XO-10P2O5-10ZnO-5PbF2（X = MgBi2Ti）的正电子ni没寿命光谱法测量缺陷结构
7. Positron Annihilation Spectroscopy Study of Interfacial Defects Formed by Anodic Oxidation of Aluminum [O] . Hebert Kurt R., Gessman Thomas, Lynn Kelvin, 2004

机译：正电子An没光谱研究铝阳极氧化形成的界面缺陷
8. Application of Positron Annihilation Method for the Study of Radiation Defects and Defects Formed in Other Ways. Final Report for the Period December 1981 - December 1985 [R] . Tumbev, G. 1987

机译：正电子湮没法在其他方法中辐射缺陷和缺陷研究中的应用。 1981年12月至1985年12月期间的最终报告

Positron annihilation at planar defects in oxides

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