首页> 外文会议>High-power diode laser technology and applications XVI >High-power and brightness laser diode modules using new DBR chips
【24h】

High-power and brightness laser diode modules using new DBR chips

机译:使用新型DBR芯片的高功率和亮度激光二极管模块

获取原文
获取原文并翻译 | 示例

摘要

The paper reports on the design, manufacturing and preliminary characterization of a new family of compact and high beam quality multi-emitter laser diode modules capable of delivering up to over 400 W in a 135/0.15 fiber. The layout exploits a proprietary architecture and is based on innovative narrow linewidth high-power DBR chips, properly combined through spatial, polarization and wavelength multiplexing. The intrinsic wavelength-stabilization of these DBR chips allows the use of the developed modules not only for direct-diode material processing but also in pump sources for ytterbium-doped fiber lasers without the need of external stabilization devices.
机译:该论文报告了一系列新的紧凑,高光束质量的多发射器激光二极管模块的设计,制造和初步特性,该模块可在135 / 0.15光纤中提供高达400 W的功率。该布局采用专有架构,并基于创新的窄线宽大功率DBR芯片,通过空间,偏振和波长多路复用正确组合。这些DBR芯片具有固有的波长稳定性,因此无需外部稳定装置即可将开发的模块不仅用于直接二极管材料加工,还可以用于掺y光纤激光器的泵浦源。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号