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首页> 外文会议>High-power diode laser technology and applications XVI >Advanced Chip Designs and Novel Cooling Techniques for Brightness Scaling of Industrial, High Power Diode Laser Bars
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Advanced Chip Designs and Novel Cooling Techniques for Brightness Scaling of Industrial, High Power Diode Laser Bars

机译：先进的芯片设计和新颖的冷却技术，可用于工业大功率二极管激光棒的亮度缩放

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摘要

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications <1 urn smile and >96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.
机译：大功率半导体二极管激光器技术的发展是由快速增长的工业激光器市场驱动的，这种大功率固态激光器系统需要更可靠的二极管源，并且需要以更低的成本提供更高的亮度和效率。在本文中，我们报告了仿真和实验数据，这些数据证明了工业应用中高亮度半导体激光棒的最新进展。进步主要体现在三个方面：垂直激光芯片外延设计，横向激光芯片电流注入控制和芯片冷却技术。通过这种改进，我们展示了盘式激光泵浦激光棒，其输出功率超过250W，在工作电流下效率为60％。研究了离子注入以改善电流限制。初始寿命测试显示出出色的可靠性。对于直接二极管应用，还要求<1 urn微笑和> 96％极化。采用硬焊料的双面冷却和优化的激光设计使单发射器性能也适用于高填充系数棒，并允许进一步将功率缩放至350W以上，峰值效率为65％，慢轴发散度小于8度，偏振度高。

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