Development of highly-efficient laser bars emitting at around 1060 nm for medical applications

机译：开发用于医疗应用的发射约1060 nm的高效激光棒

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An overview is presented on the recent progress in the development of high power laser bars at wavelengths around 1060nm. The development is focused on highly efficient and reliable laser performance under pulsed operation for medical applications. The epitaxial structure and lateral layout of the laser bars were tailored to meet the application requirements. Reliable operation peak powers of 350W and 500W are demonstrated from laser bars with fill-factor FF=75% and resonator lengths 1.5mm and 2.0mm, respectively. Moreover, 60W at current 65A with lifetime >10.000h are presented. The power scaling with fill-factor enables a cost reduction ($/W) up to 35%.

机译：概述了1060nm左右波长的高功率激光棒的最新进展。该开发专注于医疗应用在脉冲操作下的高效和可靠的激光性能。量身定制的激光棒的外延结构和横向布局可满足应用要求。从填充系数FF = 75％和谐振器长度分别为1.5mm和2.0mm的激光棒可以证明350W和500W的可靠工作峰值功率。此外，提出了电流65A时60W，寿命> 10.000h。具有填充因子的功率缩放可将成本降低（$ / W）达35％。

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来源
《High-power diode laser technology and applications XVI》|2018年|105140D.1-105140D.10|共10页
会议地点 San Francisco(US)
作者
Agnieszka Pietrzak; Martin Zorn; Jens Meusel; Ralf Huelsewede; Juergen Sebastian;
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作者单位

JENOPTIK Diode Lab GmbH, Max-Planck-Str. 2, 12489 Berlin, Germany;

JENOPTIK Diode Lab GmbH, Max-Planck-Str. 2, 12489 Berlin, Germany;

JENOPTIK Laser GmbH, Goeschwitzer Str. 29, 07745 Jena, Germany;

JENOPTIK Diode Lab GmbH, Max-Planck-Str. 2, 12489 Berlin, Germany;

JENOPTIK Diode Lab GmbH, Max-Planck-Str. 2, 12489 Berlin, Germany;

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正文语种 eng
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关键词
1060 nm; medical application; hair removal; liposuction; high power; laser bar; laser diode;

机译：1060 nm;医疗应用；除毛;吸脂大功率;激光棒激光二极管;

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专利

1. Highly efficient InGaAs QW vertical external cavity surface emitting lasers emitting at 1060 nm [J] . K.S. Kim, J.R. Yoo, S.M. Lee, Journal of Crystal Growth . 2006,第2期

机译：高效InGaAs QW垂直外腔表面发射激光器，发射波长为1060 nm
2. Simulations of the optical properties of broad-area edge-emitting semiconductor lasers at 1060 nm based on the PBC laser concept [J] . V P Kalosha, K Posilovic, T Kettler, Semiconductor science and technology . 2011,第7期

机译：基于PBC激光器概念的1060 nm广域边缘发射半导体激光器的光学特性仿真
3. 1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area [J] . Miah M.J., Kettler T., Posilovic K., Applied Physics Letters . 2014,第15期

机译：来自1060 nm垂直发射激光区域的边缘发射激光器的1.9 W连续波单横模发射
4. Development of highly-efficient laser bars emitting at around 1060 nm for medical applications [C] . Agnieszka Pietrzak, Martin Zorn, Jens Meusel, SPIE Conference on High-Power Diode Laser Technology . 2018

机译：高效激光棒的开发在1060nm左右的医疗应用中发出
5. Development of wide bandgap II--VI materials for visible lasers and light emitting diodes. A. Bipolar doping and electroluminescence of ZnMgCdSe structures. B. Hexagonal ZnSe-based structures [D] . Lin, Wei-Cheng Wilson 2000

机译：开发用于可见光激光器和发光二极管的宽带隙II-VI材料。 A. ZnMgCdSe结构的双极掺杂和电致发光。 B.六角形ZnSe基结构
6. Development of ultrafast laser-based x-ray in-vivo phase-contrast micro-CT beamline for biomedical applications at Advanced Laser Light Source (ALLS) [O] . Russell Kincaid, Andrzej Krol, Sylvain Fourmaux, -1

机译：在高级激光光源（ALLS）上为生物医学应用开发基于激光的超快X射线体内相衬微CT射线线
7. Analysis of a 1060nm Vertical External Cavity Surface Emitting Laser [O] . Haupt Sebastian 2013

机译：1060nm垂直外腔面发射激光器的分析
8. Optimized Performance GaAs-Based Diode Lasers: Reliable 800-nm 125W Bars and 83.5% Efficient 975-nm Single Emitters [R] . Crump, P. , Wang, J. , Crump, T. , 2005

机译：优化的性能Gaas基二极管激光器：可靠的800纳米125W棒和83.5％高效975纳米单发射器

Development of highly-efficient laser bars emitting at around 1060 nm for medical applications

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