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首页> 外文会议>Proceedings of the 2011 14th IEEE International Multitopic Conference >Current transport studies and extraction of series resistance of Pd/ZnO Schottky diode
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Current transport studies and extraction of series resistance of Pd/ZnO Schottky diode

机译：Pd / ZnO肖特基二极管的电流传输研究和串联电阻的提取

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摘要

Electrical characterization of Palladium (Pd) Schottky diodes on n-type zinc oxide (ZnO) is performed by current-voltage (I–V) and capacitance-voltage (C-V) and current-voltage-temperature (I-V-T) measurements. Single crystal bulk ZnO wafer synthesized hydrothermally in the wurtzite (0001) orientation has been used for device fabrication. From I–V measurements the Schottky diodes exhibited a non-linear rectifying behavior with a barrier height of 0.65eV and an ideality factor of 4.1. Room temperature current transport mechanism has been investigated from logI - logV plot. Series resistance (Rs) is extracted from forward I–V characteristics by using Chueng function and Norde function. Rs is also extracted from I-V-T measurements at two different temperatures, by using modified Norde function. The series resistance is found in the range from 313 to 460 Ω. A comparison is made between the obtained values of Series resistances and possible reasons of discrepancy are addressed.
机译：n型氧化锌（ZnO）上的钯（Pd）肖特基二极管的电特性是通过电流-电压（IV）和电容-电压（C-V）和电流-电压-温度（I-V-T）测量来执行的。以纤锌矿（0001）取向水热合成的单晶块状ZnO晶片已用于器件制造。根据I–V测量，肖特基二极管表现出非线性整流行为，势垒高度为0.65eV，理想因子为4.1。从logI-logV曲线研究了室温电流传输机制。通过使用Chueng函数和Norde函数从正向I–V特性中提取串联电阻（R s ）。通过使用改进的Norde函数，还可以在两个不同温度下从I-V-T测量中提取R s 。发现串联电阻在313至460 range的范围内。在获得的串联电阻值之间进行比较，并解决可能的差异原因。

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