Understanding variability in MgO-based ReRAM devices for trust in semiconductor designs

机译：了解基于MgO的ReRAM器件的可变性以信任半导体设计

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This paper discusses the characteristics and fabrication processes involved in novel MgO-Si based forming-free and self-compliant current controlled Resistive Random Access Memory (ReRAM) devices. Experimental data was taken from several devices and used to generate a model to simulate device switching characteristics. The unique characteristics of these devices are utilized to demonstrate an application in hardware security. The application is then validated through a series of simulations of the circuit design.

机译：本文讨论了基于新颖的基于MgO-Si的无成形和自适应电流控制的电阻型随机存取存储器（ReRAM）器件的特性和制造工艺。实验数据来自数个设备，并用于生成模型以仿真设备开关特性。这些设备的独特特性可用于演示硬件安全性中的应用。然后，通过一系列电路设计仿真来验证该应用。

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来源
《Proceedings of the 2016 IEEE National Aerospace and Electronics Conference》|2016年|372-375|共4页
会议地点 Dayton(US)
作者
T. Schultz; T. Bailey; R. Jha;
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作者单位

EDACS Lab, University of Cincinnati, Cincinnati, Ohio, United States;

EDACS Lab, University of Cincinnati, Cincinnati, Ohio, United States;

EDACS Lab, University of Cincinnati, Cincinnati, Ohio, United States;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Switches; Resistance; Electrical resistance measurement; Security; Electrodes; Semiconductor device measurement; Voltage measurement;

机译：开关;电阻;电阻测量;安全性;电极;半导体器件测量;电压测量;

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1. Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices [J] . Zhang Hehe, Yoo Sijung, Menzel Stephan, ACS applied materials & interfaces . 2018,第35期

机译：理解Pt / TiO2 / Ti / Pt纳米型RERAM器件中具有相反极性的两种双极电阻切换模式的共存
2. Performance Enhancement of a Time-Delay PUF Design by Utilizing Integrated Nanoscale ReRAM Devices [J] . Karsten Beckmann, Harika Manem, Nathaniel C. Cady Emerging Topics in Computing, IEEE Transactions on . 2017,第3期

机译：利用集成的纳米级ReRAM器件增强延时PUF设计的性能
3. Semiconductors: Interface Design Principles for High‐Performance Organic Semiconductor Devices (Adv. Sci. 6/2015) [J] . Brian K. Crone, Cheng-Yu Kuo, Darryl L. Smith, Advanced Science . 2015,第6期

机译：半导体：高性能有机半导体器件的接口设计原理（Adv。Sci。6/2015）
4. Understanding variability in MgO-based ReRAM devices for trust in semiconductor designs [C] . T. Schultz, T. Bailey, R. Jha IEEE National Aerospace and Electronics Conference . 2016

机译：了解基于MGO的REERAM设备的可变性，以信任半导体设计
5. Characterization of HfO2-Based ReRam and the Development of a Physics Based Compact Model for the MIM Class of Memristive Devices [D] . ?Olexa, Nicholas Quinn 2020

机译：基于HFO2的RERAM的表征与MIM类存储装置的物理学型号的开发
6. Semiconductors: Interface Design Principles for High‐Performance Organic Semiconductor Devices (Adv. Sci. 6/2015) [O] . Wanyi Nie, Gautam Gupta, Brian K. Crone, 2015

机译：半导体：高性能有机半导体器件的接口设计原理（Adv。Sci。6/2015）
7. Self-Assembled Naphthalimide Nanoparticles for Nonvolatile ReRAM Devices: An Efficient Approach toward High Performance Solution-Processed and All-Organic Two-Terminal Resistive Memory Devices [O] . -1

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8. Design-Dependent Variability of Pulse Hardness of Types of Discrete Semiconductor Devices (Intervendor Variations) [R] . Kalab, B. M. 1982

机译：离散半导体器件类型的脉冲硬度的设计相关变化（Intervendor Variations）

Understanding variability in MgO-based ReRAM devices for trust in semiconductor designs

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