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Wafer-level vacuum-encapsulated ultra-low voltage tuning fork MEMS resonator

机译:晶圆级真空封装的超低压音叉MEMS谐振器

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We present the design of a wafer-level vacuum-encapsulated silicon tuning fork resonator operating at 32 kHz, along with a low power Complementary Metal-Oxide Semiconductor (CMOS) sustaining amplifier towards an oscillator. The resonator is designed using MEMS Integrated Design for Inertial Sensors (MIDIS) process developed by Teledyne DALSA Semiconductor Inc. (TDSI). The MicroElectroMechanical Systems (MEMS) resonator is designed to operate with an ultra-low DC polarization voltage, as low as 1V, and low motional resistance. This is achieved by using a transduction gap reduction technique based on electrostatic deflection of movable electrode and subsequent localized melting of welding pads. A transimpedance operational amplifier is used as sustaining amplifier to help with continuous oscillation. The oscillator operates with an average power consumption of 1.86 mW that is suitable for mobile electronics.
机译:我们介绍了工作在32 kHz的晶圆级真空封装硅音叉谐振器的设计,以及向振荡器提供的低功率互补金属氧化物半导体(CMOS)维持放大器。使用Teledyne DALSA半导体公司(TDSI)开发的MEMS惯性传感器集成设计(MIDIS)工艺设计谐振器。 MicroElectroMechanical Systems(MEMS)谐振器设计为以低至1V的超低DC极化电压和低运动电阻工作。这是通过使用基于可移动电极的静电偏转以及随后焊垫的局部熔化的换能间隙减小技术来实现的。跨阻运算放大器用作维持放大器,以帮助持续振荡。该振荡器的平均功耗为1.86 mW,适用于移动电子产品。

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