Temperature Dependence(300-600K) Of Parasitic Bipolar Effects in SOI-MOSFETs

机译：SOI-MOSFET中寄生双极性效应的温度依赖性（300-600K）

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The temperature dependence of parasitic bipolar effects in SOI-MOSFETs is investigated as a function of drain bias. A simple extraction technique for the bipolar current gain #beta# is presented. Based on experimental results, it is shown that the parasitic bipolar transistor ofthe SOI-MOS structure behaves as an ordinary bipolar device. #beta# increases with temperature causing premature breakdown and latch at elevated temperatures. The main mechanisms involved in the device latch are outlined.

机译：研究了SOI-MOSFET中寄生双极效应对温度的依赖关系，它是漏极偏置的函数。提出了一种用于双极电流增益＃beta＃的简单提取技术。根据实验结果表明，SOI-MOS结构的寄生双极型晶体管的行为与普通的双极型器件相同。＃beta＃随着温度增加而引起过早击穿，并在高温下锁存。概述了设备锁存器中涉及的主要机制。

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来源
《Proceedings of the 27th European solid-state device research conference》|1997年|p.520-523|共4页
会议地点 Stuttgart(DE);Stuttgart(DE)
作者
G.Reichert; C.Raynaud; O.Faynot; F.Balestra; S.Cristoloveanu;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Temperature Dependence(300-600K) Of Parasitic Bipolar Effects in SOI-MOSFETs

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