The characteristics of the BST thin films deposited by two-step deposition process wre investigated. A 100 A thick bottom layer was deposited at 600 deg C then upper main layer was in-situ deposited at 350 deg C by rf magnetron co-sputtering, respectively. Two-step deposited BST thin film of 500 A showed lower leadkage current density of 2*10~(-8)A/cm~2 at 1.5V and more wide flat region in the low field than those of BST thin film deposited by one step process, and small silicon oxide equivalent thickness of 4.9A. With the decrease of film thickness, equivalent oxide thickness which is about 5.4A for the film with thickness of 1000A can be reduced to 4.2A for 200A.
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