On the determination of the time-dependent degradation laws in deep submicron SOI MOSFETs

机译：关于深亚微米SOI MOSFET随时间变化的退化规律的确定

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Hot-carrier effects are thoroughly investigated in deep submicron N-and P-channel SOI MOSFET. A saturation phenomenon relative to the initial power time-dependent law can be observed for long stress time. In this paper, various lifetime prediction methods in the saturation regime are proposed and compared. The gate length dependence of the maximal drain biases in order to obtain a 10 years lietime is also addressed with these various extrapolation techniques.

机译：在深亚微米N沟道和P沟道SOI MOSFET中彻底研究了热载流子效应。较长的应力时间可以观察到相对于初始功率时间相关定律的饱和现象。本文提出并比较了饱和状态下的各种寿命预测方法。为了获得10年的停顿时间，最大漏极偏置的栅极长度依赖性也通过这些各种外推技术得到了解决。

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《Proceedings of the 27th European solid-state device research conference》|1997年|p.696-699|共4页
会议地点 Stuttgart(DE);Stuttgart(DE)
作者
S.H.Renn; J.L.Pelloie; F.Balestra;
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正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress [J] . Zheng Qiwen, Yu Xuefeng, Cui Jiangwei, Journal of Semiconductors . 2013,第7期

机译：处于断态应力下的深亚微米部分耗尽的SOI NMOSFET中前沟道和后沟道的退化
2. Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation [J] . 薛守斌, 黄如, 黄德涛, 中国物理：英文版 . 2010,第011期

机译：重离子辐照后沟道和源极/漏极区域中的位移损伤对深亚微米MOSFET的DC特性退化的影响
3. Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation [J] . Xue Shou-Bin, Huang Ru, Huang De-Tao, 中国物理：英文版 . 2010,第011期

机译：重离子辐照后沟道和源极/漏极区域中的位移损伤对深亚微米MOSFET的DC特性退化的影响
4. On the determination of the time-dependent degradation laws in deep submicron SOI MOSFETs [C] . S.H.Renn, J.L.Pelloie, F.Balestra European solid-state device research conference . 1997

机译：深度亚微米SOI MOSFET中依赖时间依赖性降解法的确定
5. Monte Carlo studies of hot-carrier degradation and device performance in low-power, deep submicron n-MOSFETs. [D] . Williams, Stewart Clark. 1999

机译：蒙特卡洛研究了低功率深亚微米n-MOSFET中的热载流子退化和器件性能。
6. Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms [O] . Guohe Zhang, Junhua Lai, Yali Su, 2019

机译：基于声子散射机理的超薄体FD SOI MOSFET导热特性研究
7. Controlling Short-channel Effects in Deep Submicron SOI MOSFETs for Improved Reliability: A Review [O] . Chaudhry, Anurag, Kumar, M. Jagadesh 2010

机译：控制深亚微米sOI mOsFET中的短沟道效应提高可靠性：回顾

On the determination of the time-dependent degradation laws in deep submicron SOI MOSFETs

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