Monte Carlo Study on Electron Transport Properties In Double-Gate Fully Depleted SOI-MOSFETs

机译：双门全耗尽SOI-MOSFET中电子输运特性的蒙特卡洛研究

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The transport properties of very thin double gate SOI MOSFETs, have been studied. We have shown the imprtance of volume inversion, which greatly reduces the dependence of the electron mobility on the surface scattering mechanisms, and enhances the mobility at high inversion charge concentrations. We have also shown that if the silicon film is extremely thin, electron mobility abruply decreases due to stronger phonon scattering.

机译：已经研究了非常薄的双栅极SOI MOSFET的传输特性。我们已经表明了体积反转的重要性，这大大降低了电子迁移率对表面散射机理的依赖性，并提高了高反转电荷浓度下的迁移率。我们还表明，如果硅膜极薄，则由于声子散射更强，电子迁移率将急剧下降。

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来源
《Proceedings of the 27th European solid-state device research conference》|1997年|p.208-211|共4页
会议地点 Stuttgart(DE);Stuttgart(DE)
作者
F.Gamiz; J.B.Roladan; J.A.Lopez-Villanueva; J.E.Carceller;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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4. Monte Carlo Study on Electron Transport Properties In Double-Gate Fully Depleted SOI-MOSFETs. [C] . F.Gamiz, J.B.Roladan, J.A.Lopez-Villanueva, European solid-state device research conference . 1997

机译：双栅完全耗尽SOI-MOSFET中电子传输性能的蒙特卡罗研究。
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Monte Carlo Study on Electron Transport Properties In Double-Gate Fully Depleted SOI-MOSFETs

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