首页> 外文会议>Proceedings of the 27th European solid-state device research conference >Examination of Transient Drift-Difusion and Hydrodynamic Modelling Accuracy for SiGe HBTs by 2D Monte-Carlo Device Simulation
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Examination of Transient Drift-Difusion and Hydrodynamic Modelling Accuracy for SiGe HBTs by 2D Monte-Carlo Device Simulation

机译:通过2D蒙特卡洛装置仿真研究SiGe HBT的瞬态漂移扩散和流体动力学建模精度

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摘要

The critical device dimensions in advanced SiGe HBTs are extremely small(<=20nm).As a consequence the validity of conventional numerical device models becomes questionable. Therefore the transient modeling accuracy of Drift-Diffusion and Hydrodynamic transport modeling is examined in this paper for an advanced SiGe HBT by means of a Monte-Carlo reference device model. The result shows that the Hydrodynamic Model should be prefered for the engineering design of advanced SiGe HBTs.
机译:先进的SiGe HBT的关键器件尺寸非常小(<= 20nm),因此传统数值器件模型的有效性令人怀疑。因此,本文通过蒙特卡洛参考装置模型研究了先进SiGe HBT的漂移扩散和流体动力传输模型的瞬态建模精度。结果表明,在先进的SiGe HBT的工程设计中应首选水动力模型。

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