Evaluation of compact noise modeling for Si/SiGe HBTs based on hierarchical hydrodynamic noise simulation

Bartels M.; Neinhus B.; Jungemann C.; Meinerzhagen B.

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Evaluation of compact noise modeling for Si/SiGe HBTs based on hierarchical hydrodynamic noise simulation

机译：基于分层水动力噪声模拟的Si / SiGe HBT紧凑噪声建模评估

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The hierarchical hydrodynamic (HD) noise simulation model used in this work allows to generate a complete small-signal noise representation of the device under test. This new noise model based on full-band Monte-Carlo (MC) generated local noise sources in conjunction with transfer function fields is currently the most accurate Si/SiGe HBT noise simulation technique with tolerable CPU requirements. This new efficient numerical noise model is verified by full-band Monte-Carlo device simulations and compared to two well-known compact noise models, the thermodynamic and the SPICE model. (C) 2003 Elsevier B.V. All rights reserved. [References: 7]

机译：这项工作中使用的分层流体动力学（HD）噪声仿真模型可以生成被测设备的完整小信号噪声表示。这种基于全频带蒙特卡洛（MC）生成的本地噪声源以及传递函数字段的新噪声模型是目前最精确的Si / SiGe HBT噪声仿真技术，具有可承受的CPU要求。这种新的有效数值噪声模型已通过全频带蒙特卡洛设备仿真得到了验证，并与两个著名的紧凑型噪声模型（热力学模型和SPICE模型）进行了比较。（C）2003 Elsevier B.V.保留所有权利。 [参考：7]

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《Applied Surface Science》 |2004年第4期|p. 350-353|共4页
作者
Bartels M.; Neinhus B.; Jungemann C.; Meinerzhagen B.;
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正文语种 eng
中图分类应用物理学;
关键词
Noise; Si/sige hbt; Hydrodynamic simulation; Compact noise models; High-frequency noise; Sige devices; 2-d dd;

机译：噪声;Si / sige hbt;水动力仿真;紧凑噪声模型;高频噪声;Sige装置;2-d dd;

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1. Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling With Experimental Results [J] . Sakalas P., Ramonas M., Schroter M., IEEE Transactions on Electron Devices . 2009,第2期

机译：SiGe HBT中的碰撞电离噪声：装置和紧凑模型与实验结果的比较
2. Experimental and modelling investigation of the influence of noise transit time and self-heating on microwave noise of Si/SiGe:C and InP/InGaAs HBTs [J] . E Ramirez-Garcia, F P Aniel, M A Enciso-Aguilar, Semiconductor science and technology . 2012,第6期

机译：噪声传播时间和自热对Si / SiGe：C和InP / InGaAs HBT微波噪声影响的实验和模型研究
3. Consistent Hydrodynamic and Monte-Carlo Simulationof SiGe HBTs Based on Table Modelsthe Relaxation Times [J] . B.Neinhüs, S.Decker, P.Graf, VLSI Design . 1998,第1a4期

机译：基于表模型的弛豫时间的SiGe HBT流体动力学和蒙特卡洛一致性模拟
4. Accuracy assessment of compact RF noise models for SiGe HBTs by hydrodynamic device simulation [C] . Christoph Jungemann, Burkhard Neinhues, Bernd Meinerzhagen, Conference on Noise in Devices and Circuits II; 20040526-20040528; Maspalomas; ES . 2004

机译：通过流体动力学装置仿真评估SiGe HBT紧凑型RF噪声模型的准确性
5. High frequency noise modeling and microscopic noise simulation for SiGe HBT and RF CMOS. [D] . Cui, Yan. 2006

机译：SiGe HBT和RF CMOS的高频噪声建模和微观噪声仿真。
6. Accurate and Fast Simulation of Channel Noise in Conductance-Based Model Neurons by Diffusion Approximation [O] . Daniele Linaro, Marco Storace, Michele Giugliano 2011

机译：通过扩散近似准确快速地模拟基于电导的模型神经元中的通道噪声
7. Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times [O] . B. Neinhüs, S. Decker, P. Graf, 1998

机译：基于桌面模型的SiGe HBTS一致的流体动力学和Monte-Carlo模拟弛豫时间

Evaluation of compact noise modeling for Si/SiGe HBTs based on hierarchical hydrodynamic noise simulation

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