Correlation Between Electromicgration Damage Kinetics and Microstriucture In Cu Interconnects

机译：铜互连中电迁移损伤动力学与微结构的相关性

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Strong correlation of the modes of electromigration damage and microstructures is reported for Cu films. It is found that changes in the microstructure may lead to qualitative variation in electromigration damage kinetics-from the traditional open circuit due to void growth to continuous damage not leading to failure .Surface diffusion acting simulataneously with grain boundary mass transport is shown to be critical for damage formatoin . Activation energy of electromigration mass transport was measured using a modified electrical resistance method, and ti was determined to be 0.95eV, indicating grain boundary diffusion.

机译：据报道，Cu膜的电迁移损伤模式与微观结构之间存在很强的相关性。发现微观结构的变化可能导致电迁移破坏动力学的质变-从传统的开路到空洞的增长到连续的破坏而不是导致破坏。表面扩散与晶界传质同时起作用对于证明是至关重要的。伤害格式化。使用改进的电阻法测量电迁移物质传输的活化能，并且ti被确定为0.95eV，表明晶界扩散。

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来源
《Proceedings of the 27th European solid-state device research conference》|1997年|p.448-451|共4页
会议地点 Stuttgart(DE);Stuttgart(DE)
作者
A.Gladkikh; M.Karpovski; A.Palevski;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Correlation Between Electromicgration Damage Kinetics and Microstriucture In Cu Interconnects

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