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Analysis of Electron Spreading Effects in Pixelless Quantum Well Imaging Devices

机译:无像素量子阱成像设备中电子扩散效应的分析

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The conversion of infrared images in multiple quantum well inrared photodetector (QWIP) structure into nonuniform distribution of the current driving a light-emitting diode(LED) is considered using an analytical model. The developed model of pixelless QWIP-LED imagers takes into account transport processes determining the device operation. The contrast transfer characteristic is dervied as a function of the number of quantum wells and the electron capture parameter. It is shown that the quality of the up-converted imaes is improved with increasing number of quantum wells. The pixel-less imaging devices under consideration can effectively convert long-wavelength infrared image into short-wavelength infrared or visible images.
机译:使用解析模型考虑了将多量子阱无序光探测器(QWIP)结构中的红外图像转换为驱动发光二极管(LED)的电流的不均匀分布。无像素QWIP-LED成像器的开发模型考虑了确定设备操作的传输过程。对比度传递特性根据量子阱数和电子捕获参数而变化。结果表明,随着量子阱数量的增加,上转换基元的质量得到改善。所考虑的无像素成像装置可以有效地将长波长红外图像转换成短波长红外或可见图像。

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