A Performance Comparison Between 0.35#mu#m Self-Aligned and Quasi-Self-Aligned Double-Polysilicon Bipolar Transistors

机译：0.35＃mu＃m自对准和准自对准双多晶硅双极晶体管的性能比较

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This paper reports a performance comparison between self-aligned (SA) and quasi-self-aligned (QSA) double-polysilicon bipolar transistors fabricated on the same wafer. A novel technique for forming the link base of QSA devices has been developed, which allows to obtain good static and dynamic performances.

机译：本文报告了在同一晶片上制造的自对准（SA）和准自对准（QSA）双多晶硅双极晶体管之间的性能比较。已经开发出一种用于形成QSA设备的链接库的新颖技术，该技术可以获取良好的静态和动态性能。

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《Proceedings of the 27th European solid-state device research conference》|1997年|p.412-415|共4页
会议地点 Stuttgart(DE);Stuttgart(DE)
作者
L.Ailloud; J.de pontcharra; G.Bartoletti; J.Kirtsch; G.Auvert; A.Chantre;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Double-polysilicon self-aligned lateral bipolar transistor [J] . P. Pengpad, D. M. Bagnall Journal of Materials Science. Materials in Electronics . 2008,第2期

机译：双多晶硅自对准横向双极晶体管
2. Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5- mu m BiCMOS technology for fast 4-Mb SRAM's [J] . Hayden J.D., Burnett J.D. IEEE Transactions on Electron Devices . 1993,第6期

机译：将双多晶硅发射极基自对准双极晶体管集成到0.5微米的BiCMOS技术中，以实现快速的4 Mb SRAM
3. Emitter resistance and performance tradeoff of submicrometer self-aligned double-polysilicon bipolar devices [J] . Yamaguchi T., Yu Y.-C.S. IEEE Transactions on Electron Devices . 1988,第12期

机译：亚微米自对准双多晶硅双极器件的发射极电阻和性能折衷
4. A Performance Comparison Between 0.35#mu#m Self-Aligned and Quasi-Self-Aligned Double-Polysilicon Bipolar Transistors [C] . L.Ailloud, J.de pontcharra, G.Bartoletti, European solid-state device research conference . 1997

机译：0.35＃mu＃m自对准和准自对准双重多晶硅双极晶体管之间的性能比较
5. Technology and physical parameter extraction formalisms for the high-frequency optimization of self-aligned gallium arsenide/aluminum gallium arsenide heterojunction bipolar transistors. [D] . Pehlke, David Richard. 1994

机译：自对准砷化镓/砷化铝镓异质结双极晶体管高频优化的技术和物理参数提取形式。
6. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques [O] . Hsin-Ying Lee, Hung-Lin Huang, Chun-Yen Tseng 2014

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7. Use of Oxynitride Dielectric to Maximise the Growth Rate of Selective Epitaxial Base Layer in a Self-Aligned Double-Polysilicon SiGe Bipolar Transistors [O] . J. Ackaert, P. Chevalier, J. -l. Lohéac, 2015

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8. Power SiGe Heterojunction Bipolar Transistors (HBTs) Fabricated by Fully Self-Aligned Double Mesa Technology [R] . Lu, Liang-Hung, Mohammadi, Saeed, Ma, Zhen-Qiang, 2001

机译：功率siGe异质结双极晶体管（HBT）采用全自对准双mesa技术制造

A Performance Comparison Between 0.35#mu#m Self-Aligned and Quasi-Self-Aligned Double-Polysilicon Bipolar Transistors

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