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Energy-aware error control coding for Flash memories

机译:闪存的节能感知错误控制编码

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The use of Flash memories in portable embedded systems is ever increasing. This is because of the multi-level storage capability that makes them excellent candidates for high density memory devices. However, cost of writing or programming Flash memories is an order of magnitude higher than traditional memories. In this paper, we design an algorithm to reduce both average write energy and latency in Flash memories. We achieve this by reducing the number of expensive '01' and '10' bit-patterns during error control coding. We show that the algorithm does not change the error correction capability and moreover improves endurance. Simulations results on representative bit-stream traces show that the use of the proposed algorithm saves, on average, 33% of write energy and 31% of latency of Intel MLC NOR Flash memory, and improves the endurance by 24%.
机译:便携式嵌入式系统中闪存的使用正在不断增加。这是因为多级存储功能使它们成为高密度存储设备的极佳候选者。但是,写入或编程闪存的成本比传统存储器高一个数量级。在本文中,我们设计了一种算法来减少闪存中的平均写入能量和延迟。我们通过在错误控制编码过程中减少昂贵的“ 01”和“ 10”位模式的数量来实现这一目标。我们证明了该算法不会改变纠错能力,而且提高了耐久性。在典型的比特流轨迹上的仿真结果表明,所提算法的使用平均可节省33%的写入能量和31%的Intel MLC NOR闪存延迟时间,并将耐久性提高24%。

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