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Inter-mixing of Ni/c-SiO<,2> under high energy heavy ion irradiations

机译:高能重离子辐照下Ni / c-SiO <,2>的互混

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摘要

The atomic mixing at Ni/SiO<,2> interfaces under 850MeV Pb or 308MeV Xe ions irradiation was investigated. Irradiation-induced interface mixing state is examined by means of Rutherford Backscattering Spectrometry and X-ray diffraction respectively. The strong atomic mixing was observed at the interface and more mixing can be induced for samples irradiated at a larger Se value or higher irradiation fluence.
机译:研究了在850MeV Pb或308MeV Xe离子辐照下Ni / SiO 2界面处的原子混合。辐射诱导的界面混合状态分别通过卢瑟福背散射光谱法和X射线衍射法进行检查。在界面处观察到强烈的原子混合,并且对于以更大的Se值或更高的辐射通量辐照的样品可以引起更多的混合。

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