Room temperature continuous-wave operation of 1.33um InAs/GaAs quantum dot laser

机译：1.33um InAs / GaAs量子点激光器的室温连续波操作

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In summary, we have demonstrated high power CW operation of a quantum dot laser with five stacks of a InAs QD layer embedded within InGaAs quantum wells. At room temperature, 355mw output power was achieved at 1.33-1.35um from both facets without facet coating for a 2.9mm-long cavity QD laser. The internal quantum efficiency is 59%, and with the total QD density of 2x10~(11)cm~(-2) for the active region the laser keep lasing at ground state up to 65℃. This work was supported by the major state key Basic Research program under contact No TG2000036603, the National High Technology Research and Development program of China under Grant No 2002AA312080, and the National Natural Science Foundation of China under Grant No 60137020.

机译：总而言之，我们展示了量子点激光器的高功率连续波操作，该量子点激光器具有嵌入InGaAs量子阱中的五叠InAs QD层。在室温下，对于长度为2.9mm的腔QD激光器，两个刻面在无刻面涂层的情况下在1.33-1.35um处可获得355mw的输出功率。内部量子效率为59％，并且在有源区的总QD密度为2x10〜（11）cm〜（-2）时，激光器在基态下保持激光发射，最高可达65℃。这项工作得到了国家重大基础研究计划（联系号TG2000036603），国家高技术研究与发展计划（资助号为2002AA312080）和国家自然科学基金（资助号为60137020）的支持。

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来源
《Proceedings of the Summer School on Semiconductor Nanostructures and Optoelectronic Devices》|2005年|P.21-24|共4页
会议地点 Beijing(CN)
作者
Q. Han; Z.C.Niu; H.Q.Ni; S.Y.Zhang; X.H.Yang; Y.Du; C.Z.Tong; H.Zhao; Y.Q.Xu; R.H.Wu;
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Institute of Semiconductor, Chinese Academy of Sciences P.O.Box 912, Beijing 100083, China;

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正文语种 eng
中图分类半导体技术;
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专利

1. Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers [J] . J.S.WANG, G. LIN, R.S. HSIAO, Applied physics. B, Lasers and optics . 2005,第8期

机译：电子垂直耦合InAs / GaAs量子点窄脊波导激光器的连续波大功率（320 mW）单模运行
2. Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature [J] . H. D. Kim, W. G. Jeong, J. H. Lee, Applied Physics Letters . 2005,第8期

机译：1.5μmInGaAs / InGaAsP / InP量子点激光器在室温下的连续波操作
3. High-Performance Three-Layer 1.3-(mu)m InAs-GaAs Quantum-Dot Lasers With Very Low Continuous-Wave Room-Temperature Threshold Currents [J] . H. Y. Liu, D. T. Childs, T. J. Badcock, IEEE Photonics Technology Letters . 2005,第6期

机译：具有非常低的连续波室温阈值电流的高性能三层1.3μmInAs-GaAs量子点激光器
4. Room temperature continuous-wave operation of 1.33um InAs/GaAs quantum dot laser [C] . Q. Han, Z.C.Niu, H.Q.Ni, School on Semiconductor Nanostructures and Optoelectronic Devices . 2005

机译：房间温度连续波操作1.33UM INAS / GaAs量子点激光器
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

机译：在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
6. InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application [O] . Qi-zhu Li, Yuan-qing Huang, Ji-qiang Ning, 2018

机译：InAs / GaAs量子点双模分布式反馈激光器向大调谐范围连续波太赫兹应用
7. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currentsud [O] . Liu H.Y., Childs D.T., Badcock T.J., 2005

机译：高性能三层1.3- / spl mu / m Inas-Gaas量子点激光器，具有极低的连续波室温阈值电流 ud

Room temperature continuous-wave operation of 1.33um InAs/GaAs quantum dot laser

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